ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
料号： ISC060N10NM6ATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.21 | $22.10 |
| 100 | $1.89 | $189.00 |
| 500 | $1.62 | $810.00 |
| 1,000 | $1.43 | $1,430.00 |
ISC060N10NM6ATMA1 概述
A power MOSFET is a voltage-controlled semiconductor switch used to commutate current in switching power supplies, motor drives, and synchronous rectification stages. Within the broader taxonomy, it sits as a child of discrete transistors, which themselves belong to discrete semiconductors and finally to the semiconductor device category. The OptiMOS 6 family represents Infineon's sixth-generation medium-voltage MOSFET platform, optimized to balance conduction loss (RDS(on)), switching loss (Qg, Qgd), and body-diode softness for hard-switched and soft-switched topologies.
The ISC060N10NM6ATMA1 specifies a maximum RDS(on) of 6 mΩ at VGS = 10 V, ID = 25 A, a gate threshold voltage of 3.3 V (typical), and a continuous drain dissipation of 3 W at Ta and 125 W at Tc. Its low gate charge and low output charge (Qoss) make it well-suited for high-frequency telecom and server power supplies, where every additional 100 kHz of switching frequency shrinks magnetics. The part is rated for operation across -55 °C to +175 °C junction temperature and is qualified to industrial-grade reliability standards.
Typical application domains include 48 V telecom intermediate bus converters, server and datacom point-of-load (POL) regulators, solar micro-inverters, synchronous rectifiers in isolated DC-DC converters, and industrial SMPS bricks. The PG-TDSON-8 FL package combines a small footprint with an exposed thermal pad that drives heat directly into the PCB copper, eliminating the need for an external heatsink in many designs.
Designers should pair the ISC060N10NM6ATMA1 with a gate driver rated above 4 V fully-on to ensure full enhancement, and place the gate-source pull-down resistor (typically 10 kΩ) close to the package to prevent unintended turn-on from Miller coupling. The exposed pad must be soldered to a copper pour of at least 25 mm² on each PCB side for thermal relief.
This page synthesizes distributor pricing, drop-in alternatives from the Infineon OptiMOS 6 family, and practical layout guidance that is not collected in any single source from the manufacturer datasheet.
直接替换替代料： ISC060N10NM6ATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： ISC060N10NM6ATMA1 （相同外形与封装尺寸） ——差异在于 Package, Operating Temperature Range, Drain-Source Voltage (VDS), Technology, Continuous Drain Current (ID) at Ta.
快速对比工具——选择替代料号进行并排对比：
ISC080N10NM6ATMA1
✅ 直接替换✓ 有现货
$1.05 / 个
查看数据手册 →ISC011N03L5SATMA1
✅ 直接替换✓ 有现货
$0.47 / 个
查看数据手册 →BSC0906NSATMA1
✅ 直接替换✓ 有现货
$0.48 / 个
查看数据手册 →BSC123N08NS3GATMA1
✅ 直接替换✓ 有现货
$0.71 / 个
查看数据手册 →BSZ096N10LS5ATMA1
✅ 直接替换✓ 有现货
$0.94 / 个
查看数据手册 →ISC060N10NM6ATMA1 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 6 100 V |
| 晶体管类型 | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Ta | 15 A |
| Continuous Drain Current (ID) at Tc | 97 A |
| Drain-Source On-Resistance (RDS(on)) | 6 mΩ at VGS = 10 V, ID = 25 A |
| Gate-Source Threshold Voltage (VGS(th)) | 3.3 V (typical) |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 125 W |
| 工作温度范围 | -55 °C to +175 °C (TJ) |
| 封装 | PG-TDSON-8 FL (5.15 x 6.15 mm) |
| 安装类型 | Surface Mount |
| Technology | OptiMOS 6 (thin-wafer trench) |
| Polarity | N-Channel |
| RoHS 状态 | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020) |
ISC060N10NM6ATMA1 引脚配置
| 引脚 1 | Source (S1) — Source connection (internally bonded to S2-S8 and exposed pad) |
| 引脚 2 | Source (S2) — Source connection |
| 引脚 3 | Source (S3) — Source connection |
| 引脚 4 | Gate (G) — Gate drive input, 10 V enhancement recommended |
| 引脚 5 | Source (S5) — Source connection |
| 引脚 6 | Source (S6) — Source connection |
| 引脚 7 | Source (S7) — Source connection |
| 引脚 8 | Source (S8) — Source connection |
| 引脚 Tab | Drain (D) — Drain connection (also bonded to exposed thermal pad on PCB) |
ISC060N10NM6ATMA1 安全工作区 (DC)
典型应用
ISC060N10NM6ATMA1 适用于 6 应用s: 48 V Telecom Intermediate Bus Converter, Server and Datacom Point-of-Load Regulators, Solar Micro-Inverters and String Inverters, Synchronous Rectifiers in Isolated DC-DC Converters, Industrial SMPS and Motor Drives, Hot-Swap and OR-ing Controllers.
48 V Telecom Intermediate Bus Converter
The ISC060N10NM6ATMA1 is well-matched to 48 V telecom intermediate bus converters (IBC) operating between 36 V and 60 V input. Its 100 V VDS rating gives 40 V transient headroom above the standard 60 V telecom maximum, while its 6 mΩ RDS(on) at 10 V VGS keeps synchronous-rectifier conduction loss below 0.5 percent at 40 A output. The low Qg and Qoss of OptiMOS 6 enable switching frequencies above 300 kHz, shrinking the IBC transformer footprint. Compared to OptiMOS 5 parts, the FOM improvement is approximately 30 percent, easing thermal budgets in sealed brick modules.
推荐
Server and Datacom Point-of-Load Regulators
For server and datacom point-of-load (POL) regulators fed from a 48 V bus, the ISC060N10NM6ATMA1 offers the ruggedness required by hot-swap and OR-ing topologies. Its 97 A continuous Tc-rated current handles 1.5 kW brick converters without paralleling, and the 125 W power dissipation at Tc supports full-load operation with a 1 square-inch top-side copper pour. The PG-TDSON-8 FL footprint matches standard POL land patterns, allowing direct substitution of older OptiMOS 5 designs while gaining 20 percent lower switching loss at 200 kHz.
推荐
Solar Micro-Inverters and String Inverters
The ISC060N10NM6ATMA1 suits solar micro-inverter and string-inverter power stages where maximum power point (MPP) voltage stays within 80 V. Its 100 V breakdown gives 25 percent safety margin against transient over-voltage events on DC bus capacitance, and the 6 mΩ RDS(on) keeps full-load efficiency above 98 percent at 25 A output. The OptiMOS 6 body-diode softness reduces reverse-recovery loss in H4 and HERIC topologies, lowering EMI filter cost. Industrial -55 °C to +175 °C junction rating supports outdoor enclosure profiles from -40 °C to +85 °C ambient.
推荐
Synchronous Rectifiers in Isolated DC-DC Converters
The ISC060N10NM6ATMA1 is a strong synchronous rectifier (SR) candidate for 48 V to 12 V isolated DC-DC converters in the 300 W to 1 kW class. Its 6 mΩ RDS(on) outperforms most planar Schottky diodes at currents above 10 A, eliminating reverse-recovery loss and improving efficiency by 1.5 percent at full load. The 97 A continuous Tc rating handles transformer secondary currents with adequate margin, and the 100 V rating is sufficient for 36 V to 60 V primary-side-derived secondaries. The PG-TDSON-8 FL exposed pad reduces PCB thermal resistance to under 10 °C/W with a 50 mm² copper pour.
推荐
Industrial SMPS and Motor Drives
For industrial switch-mode power supplies (SMPS) and 48 V motor-drive half-bridges, the ISC060N10NM6ATMA1 delivers 100 V ruggedness and a 97 A continuous rating that supports 5 kW peak motor power. Its low Qgd reduces shoot-through risk by allowing dead-time as low as 30 ns, while the optimized body diode survives hard commutation events in motor regenerative braking. The 175 °C junction rating enables under-hood automotive and industrial deployments where ambient temperatures reach 125 °C. The PG-TDSON-8 FL footprint is compatible with standard Infineon 100 V evaluation PCBs.
推荐
Hot-Swap and OR-ing Controllers
Hot-swap and OR-ing controllers in 48 V server backplanes can leverage the ISC060N10NM6ATMA1 as the main pass MOSFET. Its 100 V VDS handles transient events up to 80 V on standard 48 V rails, while its 6 mΩ RDS(on) keeps forward voltage drop below 200 mV at 30 A load. The PG-TDSON-8 FL exposed pad supports sustained 3 W dissipation on FR4 with a 1 square-inch copper pour, sufficient for 99 percent of hot-swap events. Pairing with a hot-swap controller such as the LM25069 reduces inrush current and protects downstream converters from transient faults.
推荐
推荐产品汇总
工程参考数据： ISC060N10NM6ATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | ISC080N10NM6ATMA1 | BSZ096N10LS5ATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 FL (5.15 x 6.15 mm) | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same | PG-TDSON-8 FL - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 80 V |
| RDS(on) max @ VGS = 10 V | 6 mΩ | 8 mΩ | 9.6 mΩ | 12.3 mΩ |
| Technology Generation | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 3 |
| Operating Temperature Range | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C |
| RoHS Compliance | Yes | Yes | Yes | Yes |
关键差异点
- Latest-generation OptiMOS 6 platform （对比 BSZ096N10LS5ATMA1)
- Lowest RDS(on) in OptiMOS 6 100 V family （对比 ISC080N10NM6ATMA1)
- 100 V voltage headroom for 48 V telecom and industrial rails （对比 BSC123N08NS3GATMA1)
设计说明
The ISC060N10NM6ATMA1 dissipates 125 W at Tc, requiring the exposed pad to be soldered to a copper pour of at least 25 mm² per side on a 1 oz 4-layer PCB. Estimated: with a 50 mm² top-side copper pour and 25 mm² inner copper, junction-to-ambient thermal resistance is approximately 45 °C/W. At 3 W dissipation the junction rise is 135 °C above ambient, requiring either active cooling or larger copper area in sustained full-load conditions.
Place a 10 kΩ gate-source pull-down resistor within 5 mm of the gate pin to prevent unintended turn-on from Miller coupling during high dv/dt switching events. Keep the high-side and low-side MOSFET gate traces short and symmetric to avoid shoot-through. Use a 4-layer PCB with a dedicated ground plane directly under the MOSFET drain tab to minimize parasitic inductance and improve thermal spreading.
Drive the ISC060N10NM6ATMA1 with a gate voltage of 10 V for full RDS(on) specification. At 6 V VGS, RDS(on) increases by 50 percent, eroding the efficiency advantage. Use a dedicated gate driver such as the 1EDN8511BXUSA1 with 4 A peak source/sink current for switching frequencies above 200 kHz. Add a 10 Ω gate resistor to dampen ringing without sacrificing switching speed.
Do not exceed the absolute maximum VDS of 100 V, including avalanche events from unclamped inductive switching. For motor-drive and relay applications, add a TVS or RC snubber rated for the worst-case demagnetization voltage. The body diode has limited reverse-recovery - in continuous-conduction mode designs, verify that the dead-time and switching frequency stay within the SOA defined in the Infineon OptiMOS 6 datasheet.
合规信息
RoHS compliant per LCSC and DigiKey product listings. Not AEC-Q100 qualified - this is an industrial-grade MOSFET. Halogen-free status not explicitly stated in provided data.
