MT62F1536M32D4DS-023 - 48Gbit LPDDR5X SDRAM | Micron Technology
料号： MT62F1536M32D4DS-023 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $34.78 | $34.78 |
| 10 | $33.5 | $335.00 |
| 100 | $31.2 | $3,120.00 |
| 500 | $29.5 | $14,750.00 |
| 1,000 | $27.9 | $27,900.00 |
MT62F1536M32D4DS-023 概述
LPDDR5X (Low Power Double Data Rate 5X) is the extended-speed evolution of the LPDDR5 DRAM standard defined by JEDEC, engineered for mobile and power-constrained computing. As a volatile SDRAM within the broader memory hierarchy (DRAM -> mobile DRAM -> LPDRAM), it stores working data for application processors while minimizing power per bit transferred, making it the dominant main-memory technology in smartphones, tablets, and AI edge devices.
Key features of this component include the 48 Gbit (6 GB) density in a single package, the 1.5G x 32 organization that supports wide 32-bit memory channels, and the LPDDR5X speed grade supporting a 4.266 GHz clock rate - a substantial bandwidth uplift over LPDDR5 (3.2 GHz, as seen in the related WT:B variant). The LVSTL interface reduces I/O swing to lower simultaneous-switching noise and I/O power at multi-gigahertz data rates.
The device operates from a supply voltage of 1.01 V to 1.12 V (VDDQ domain), reflecting the reduced core and I/O voltages that define the LPDDR5X generation. The 315-TFBGA package (12.4 x 15 mm) uses a fine-pitch ball grid array to accommodate the high ball count required by the 32-bit data bus, address/control, and power delivery - a footprint intended for HDI (high-density interconnect) mobile-class PCB stackups.
Typical applications include flagship smartphone main memory, AI accelerator and edge-inference modules that stream large weight arrays, automotive infotainment and ADAS domains (the AEC-Q100-qualified AUT:C variant of this same die serves that market), and high-performance portable compute such as tablets and XR headsets. High bandwidth at low power per gigabyte is the common requirement across all of these.
Design consideration: LPDDR5X signal integrity demands strict length matching of the data groups, careful controller training for read/write eye margins, and following the power-rail sequencing and termination guidance in the manufacturer datasheet; reuse a validated reference layout rather than improvising the fly-by topology.
This page synthesizes distributor pricing and availability, drop-in same-die variant comparisons (WT, AUT, AAT, AIT speed/temperature options), and practical design notes not found in the manufacturer datasheet.
直接替换替代料： MT62F1536M32D4DS-023 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： MT62F1536M32D4DS-023 （相同外形与封装尺寸） ——差异在于 Memory Type, Package.
快速对比工具——选择替代料号进行并排对比：
MT62F1536M32D4DS-023 AUT:C
✅ 直接替换📋 参考替代料（不在目录中）
MT62F1536M32D4DS-023 AAT:C
✅ 直接替换📋 参考替代料（不在目录中）
MT62F1536M32D4DS-023 AIT:C
✅ 直接替换📋 参考替代料（不在目录中）
MT62F1536M32D4DS-023 WT:D
✅ 直接替换📋 参考替代料（不在目录中）
MT62F1536M32D4DS-023 WT ES:C
✅ 直接替换📋 参考替代料（不在目录中）
MT62F1536M32D4DS-023 最大额定值与电气特性
| 存储器类型 | Mobile LPDDR5X SDRAM (volatile) |
| 存储容量 | 48 Gbit (6 GB) |
| Memory Organization | 1.5G x 32 |
| Clock Frequency | 4.266 GHz |
| Memory Interface | LVSTL |
| 电源电压 | 1.01 V to 1.12 V |
| 工作温度 | -25C to +85C (TC) |
| 封装 | 315-TFBGA (12.4 mm x 15 mm) |
| 安装类型 | Surface Mount |
| 数据总线宽度 | 32 bit |
| Speed Grade Code | -023 (LPDDR5X 4.266 GHz class) |
| Temperature Grade Code | WT (extended commercial, -25C to +85C) |
| AEC-Q100 | Not qualified (see AUT:C variant for automotive grade) |
| Packaging Option | Tray (TR tape-and-reel variant available) |
MT62F1536M32D4DS-023 315-tfbga (12.4 mm x 15 mm) 引脚配置指南
MT62F1536M32D4DS-023（315-tfbga (12.4 mm x 15 mm) 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： MT62F1536M32D4DS-023.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MT62F1536M32D4DS-023 适用于 6 应用s: Flagship Smartphone Main Memory, Edge AI Inference Modules, Automotive Infotainment and ADAS Domain Controllers, Tablets and XR Headset Compute, Networking and 5G Small-Cell Equipment, Test, Measurement and Prototype Platforms.
Flagship Smartphone Main Memory
The MT62F1536M32D4DS-023 is purpose-built for flagship smartphone main memory, where its 48 Gbit (6 GB) density and 4.266 GHz LPDDR5X speed provide the bandwidth that modern SoCs demand for multitasking, gaming, and on-device image processing. The 1.5G x 32 organization pairs directly with application processors supporting 32-bit LPDDR5X channels, and the 315-TFBGA (12.4 x 15 mm) footprint fits dense mobile PCB stackups. LVSTL signaling and the 1.01 V to 1.12 V supply minimize power per bit, protecting battery life. Circuit-wise, the DRAM connects to the SoC memory controller over length-matched fly-by routed data groups; the trade-off versus lower-speed LPDDR5 is tighter signal-integrity margins, so controller training must be validated across the -25C to +85C range.
推荐
Edge AI Inference Modules
Edge-AI accelerators and smart-camera SoCs stream large neural-network weight arrays from main memory, making bandwidth the limiting factor for frames per second. The MT62F1536M32D4DS-023's 4.266 GHz LPDDR5X interface delivers substantially more bandwidth than LPDDR5-class parts (such as the related 3.2 GHz WT:B), directly improving inference throughput for quantized CNN and transformer models. The 48 Gbit capacity holds multi-hundred-megabyte model binaries plus activation buffers without external storage round-trips. In typical deployments the DRAM sits on the same package substrate or a short HDI board trace from the NPU, with PMIC rails regulated into the 1.01 V to 1.12 V window; the power-per-bit savings of LPDDR5X reduce thermal throttling in fanless enclosures.
推荐
Automotive Infotainment and ADAS Domain Controllers
Automotive cockpit and ADAS domain controllers require high-bandwidth, temperature-robust DRAM. The MT62F1536M32D4DS-023 AUT:C variant, verified as AEC-Q100 qualified by Microchip USA, provides the identical 48 Gbit LPDDR5X 4.266 GHz die for navigation rendering, surround-view camera fusion, and driver-monitoring workloads. The 1.5G x 32 organization supports the wide memory channels used by automotive SoCs, and the 315-TFBGA package survives the vibration and reflow profiles of automotive assembly. Designers should select the AUT or AAT suffix rather than the consumer WT suffix, validate controller training across the full automotive temperature range, and budget power-delivery impedance for sustained 4.266 GHz operation in hot environments such as dash-mounted enclosures.
推荐
Tablets and XR Headset Compute
Tablets and XR (VR/AR) headsets combine high-resolution displays, multi-camera sensor pipelines, and demanding graphics - workloads that saturate memory bandwidth. The MT62F1536M32D4DS-023 supplies 6 GB of LPDDR5X at 4.266 GHz, giving SoCs headroom for 4K video buffers and low-latency frame rendering, where the 1.01 V to 1.12 V supply also reduces the heat budget in thermally constrained wearable enclosures. The 12.4 x 15 mm 315-TFBGA package enables compact stacked or side-by-side DRAM placements on rigid-flex assemblies common to headsets. Because XR systems train the memory controller at boot for every speed bin, include the -023 timing tables in firmware validation; the benefit versus LPDDR5 is roughly a one-third bandwidth increase at comparable power.
推荐
Networking and 5G Small-Cell Equipment
5G small cells, industrial gateways, and edge routers use LPDDR5X as packet-buffer and control-plane memory, where line-rate forwarding depends on sustained random-access bandwidth. The MT62F1536M32D4DS-023's 4.266 GHz interface and 32-bit bus give network processors the read/write concurrency needed for deep packet buffers, while the 48 Gbit capacity absorbs burst traffic between MAC and CPU. Its LVSTL interface keeps I/O switching noise low near mixed-signal PHY circuitry. In these designs the DRAM runs from board-level PMIC rails regulated into the 1.01 V to 1.12 V specification, with the -25C to +85C industrial-compatible range (WT grade) covering outdoor enclosures; for harsher environments, the AIT:C industrial suffix is the appropriate drop-in.
推荐
Test, Measurement and Prototype Platforms
Validation engineers use the MT62F1536M32D4DS-023 WT ES:C engineering-sample variant on bring-up boards to qualify memory-controller training, signal integrity, and thermal behavior before production silicon is released, and the same footprint permits seamless migration to the WT:C production part. The 315-TFBGA (12.4 x 15 mm) package on an HDI test coupon lets teams probe LPDDR5X eye diagrams at 4.266 GHz and verify PMIC sequencing into the 1.01 V to 1.12 V window. Because ES parts are not production-qualified, limit their use to lab validation. This workflow shortens time-to-market by de-risking the two hardest LPDDR5X integration tasks - controller training tables and fly-by routing - ahead of volume commits.
推荐
推荐产品汇总
工程参考数据： MT62F1536M32D4DS-023 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT62F1536M32D4DS-023 AUT:C | MT62F1536M32D4DS-023 AAT:C | MT62F1536M32D4DS-023 WT:D |
|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Package | 315-TFBGA (12.4x15 mm) | 315-TFBGA (12.4x15 mm) - same | 315-TFBGA (12.4x15 mm) - same | 315-TFBGA (12.4x15 mm) - same |
| Memory Size | 48 Gbit | 48 Gbit | 48 Gbit | 48 Gbit |
| Organization | 1.5G x 32 | 1.5G x 32 | 1.5G x 32 | 1.5G x 32 |
| Clock Frequency | 4.266 GHz | 4.266 GHz | 4.266 GHz | 4.266 GHz class |
| Interface | LVSTL | LVSTL | LVSTL | LVSTL |
| AEC-Q100 Qualification | No (WT grade) | Yes | Yes (automotive grade) | No |
关键差异点
- LPDDR5X 4.266 GHz speed class （对比 MT62F1536M32D4DS-023 WT:B)
- Automotive drop-in variant available （对比 MT62F1536M32D4DS-023 AUT:C)
- Single-package 6 GB density （对比 MT53E1G64D4HJ-046)
设计说明
LPDDR5X at 4.266 GHz leaves narrow read/write eye margins. Route data groups as tightly length-matched pairs with ground-referenced fly-by topology on the address/command bus, and follow the manufacturer's reference design for via stub minimization on the HDI stackup. Simulate the full channel (SoC, package, PCB, DRAM package) before tape-out; re-training tables in the memory controller must include the -023 speed bin. Skipping channel simulation is the most common cause of failed training at temperature extremes.
The 1.01 V to 1.12 V VDD/VDDQ domain requires a PMIC rail with tight DC tolerance and fast transient response, since LPDDR5X termination current changes abruptly between idle and burst. Place bulk and 0.1 uF decoupling ceramic capacitors adjacent to the 315-TFBGA power ball clusters, and follow the datasheet power-up sequencing order to avoid controller latch conditions. Budget rail impedance for sustained 4.266 GHz activity to prevent droop-induced training failures.
Do not substitute the WT:B (200-WFBGA, 3.2 GHz LPDDR5) on a WT:C footprint - the ball maps differ. When a design may ship in automotive or industrial variants, lay out for the 315-TFBGA and order the AUT:C/AAT:C/AIT:C suffix so the same PCB serves all temperature grades. Also confirm the ES:C engineering-sample parts are excluded from production BOMs; they are validation silicon only.
合规信息
The standard WT:C grade is not AEC-Q100 qualified; the AUT:C variant is AEC-Q100 qualified per Microchip USA. RoHS/REACH status must be confirmed from the Micron part-detail page.
