MT62F1536M64D8EK-023 - 96Gbit LPDDR5X SDRAM | Micron | Mobile
料号： MT62F1536M64D8EK-023 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1 | $1.00 |
MT62F1536M64D8EK-023 概述
LPDDR (Low Power Double Data Rate) SDRAM is a class of DRAM optimized for mobile and power-sensitive computing systems, sitting within the memory hierarchy as a main-memory solution beneath the broader DRAM family that also includes DDR4, DDR5, and GDDR variants. Unlike desktop DDR memory, LPDDR devices trade raw peak throughput per channel for significantly lower operating voltage and standby power, which is why they dominate smartphone, tablet, and edge-compute designs.
Key features of this device include the LPDDR5X interface supporting data rates up to 4.266 GHz (4266 MT/s class), a narrow supply voltage window of 1.01 V to 1.12 V on the core rail, and the 441-ball fine-pitch TFBGA (14 x 14 mm) footprint that enables dense PoP or discrete mounting on mobile PCBs. The x64 bus organization allows a single package to serve as a complete 12 GB memory solution in wide-bus SoC platforms.
At the silicon level, the device uses LVSTL signaling, which reduces I/O voltage swing relative to earlier SSTL/POD interfaces, cutting both dynamic I/O power and signal-integrity margins required at multi-gigabit data rates. The -023 speed bin places the part in the highest-frequency LPDDR5X tier, suitable for flagship mobile SoCs, AI accelerators at the edge, and high-bandwidth embedded processors.
Typical applications include flagship smartphone main memory, tablet and notebook LPDDR5X memory subsystems, automotive infotainment and ADAS platforms (via the automotive AAT/AUT/AIT grade variants), and edge AI modules where 96 Gbit of low-power DRAM bandwidth is required next to an SoC.
Design considerations: LPDDR5X routing requires careful length matching of the CA and DQ bus, and the 1.01 V to 1.12 V core supply demands a tight-tolerance PMIC with VDDQ dynamic voltage scaling support. Verify the exact grade suffix (WT, AAT, AIT, AUT) against your temperature and qualification requirements before layout freeze.
This page synthesizes distributor pricing, drop-in grade-variant alternatives, and practical design notes not found in the manufacturer datasheet alone.
直接替换替代料： MT62F1536M64D8EK-023 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
MT62F1536M64D8EK-023 AIT:C
✅ 直接替换📋 参考替代料（不在目录中）
MT62F1536M64D8EK-023 AAT:C
✅ 直接替换📋 参考替代料（不在目录中）
MT62F1536M64D8EK-023 AUT:C
✅ 直接替换📋 参考替代料（不在目录中）
MT62F1536M64D8EK-023 WT:B
✅ 直接替换📋 参考替代料（不在目录中）
MT62F1536M64D8EK-023 WT:D
✅ 直接替换📋 参考替代料（不在目录中）
MT62F1536M64D8EK-023 最大额定值与电气特性
| 存储器类型 | Mobile LPDDR5X SDRAM |
| 存储容量 | 96 Gbit (12 GB) |
| 存储组织 | 1.5G x 64 |
| Clock Frequency | 4.266 GHz |
| Memory Interface | LVSTL |
| 电源电压 | 1.01 V to 1.12 V |
| 封装 | 441-TFBGA (14 x 14 mm) |
| 安装类型 | Surface Mount |
| Ball Count | 441 |
| Package Body Size | 14 mm x 14 mm |
| 数据总线宽度 | 64-bit |
| Speed Grade | -023 (4266 class) |
MT62F1536M64D8EK-023 14 mm x 14 mm 引脚配置指南
MT62F1536M64D8EK-023（14 mm x 14 mm 封装）的引脚配置。 该数字 IC 包含 GPIO、通信接口（UART、SPI、I2C）和电源引脚。请参阅制造商数据手册以了解复用引脚功能和配置选项。对嵌入式系统设计和 PCB 布局至关重要。
暂无详细引脚数据： MT62F1536M64D8EK-023.
请参阅 数据手册 以查看完整引脚配置。
典型应用
MT62F1536M64D8EK-023 适用于 6 应用s: Flagship Smartphone Main Memory, Automotive Infotainment and ADAS, Tablet and Notebook LPDDR5X Memory, Edge AI and Robotics Modules, 5G Networking and Edge Servers, AR/VR and Wearable Compute.
Flagship Smartphone Main Memory
The MT62F1536M64D8EK-023 delivers 12 GB of LPDDR5X main memory in a single 441-TFBGA (14 x 14 mm) package, which is the standard main-memory configuration for flagship smartphones. Its 4.266 GHz LPDDR5X data rate with LVSTL signaling provides the bandwidth that flagship mobile SoCs require for multitasking, high-refresh-rate displays, and computational photography pipelines, while the 1.01 V to 1.12 V core voltage keeps dynamic power within smartphone battery budgets. In a typical design, the device sits directly adjacent to the application processor on the same PCB or inside a stacked PoP assembly, with the CA and DQ buses length-matched to the SoC's memory-controller fly-by topology. Because LPDDR5X supports per-bank refresh and DVFS, the PMIC can scale VDDQ down during idle states, measurably extending standby battery life compared with fixed-voltage LPDDR4 designs.
推荐
Automotive Infotainment and ADAS
For automotive cockpit and ADAS platforms, the AEC-Q100 qualified grade variants (AIT and AUT suffixes) of this 96 Gbit LPDDR5X device bring 4.266 GHz bandwidth to next-generation domain controllers. Automotive infotainment SoCs driving multiple high-resolution displays and surround-view camera fusion require the multi-gigabyte-per-second memory bandwidth that LPDDR5X provides, while the -40C to +95C AIT operating range covers the harsh cabin and engine-bay-adjacent environments defined by automotive qualification. The same 441-TFBGA (14 x 14 mm) footprint as the commercial WT grade means a single PCB design can serve both consumer and automotive product lines, simplifying platform reuse. Designers should confirm the SoC's LPDDR5X speed-bin support and apply the automotive-grade PMIC companion parts that implement the fault monitoring and voltage-margining expected in ASIL-relevant memory subsystems.
推荐
Tablet and Notebook LPDDR5X Memory
Mainstream tablets and thin-and-light notebooks adopt LPDDR5X to reach desktop-class memory bandwidth while meeting fanless thermal envelopes. The MT62F1536M64D8EK-023 provides a complete 64-bit, 12 GB memory channel in one 14 x 14 mm package, and two packages can be paired for 24 GB in wide 128-bit configurations where the SoC supports dual channels. Its 1.01 V to 1.12 V supply window allows the platform PMIC to exploit LPDDR5X dynamic voltage scaling, reducing platform power during light workloads - a key contributor to all-day battery life targets. On the PCB, the memory should be placed within the SoC's specified trace-length window, and the LVSTL I/O structure requires the controller-side termination scheme defined in the LPDDR5X specification. Thermal design should account for DRAM refresh current under sustained AI or media workloads.
推荐
Edge AI and Robotics Modules
Edge AI accelerator modules and autonomous robotics controllers need large on-board DRAM for neural network weight storage, frame buffers, and sensor fusion pipelines, but cannot afford the power of DDR5 server memory. The MT62F1536M64D8EK-023's combination of 12 GB capacity and 4.266 GHz LPDDR5X throughput supplies the memory bandwidth that inference accelerators demand for real-time vision models, while the low 1.01 V to 1.12 V rail keeps module power within passive-cooled budgets. The 441-TFBGA (14 x 14 mm) package integrates cleanly into SOM (system-on-module) form factors such as the 60 x 45 mm embedded standard. The extended-temperature AAT variant, rated -40C to +105C, suits industrial robots and outdoor edge enclosures. Verify the accelerator SoC's memory-controller calibration supports the -023 speed bin at full temperature range.
推荐
5G Networking and Edge Servers
5G small-cell baseband units, network appliances, and micro-edge servers increasingly use LPDDR5X instead of DDR4 DIMMs to save board space and power in fanless enclosures. The MT62F1536M64D8EK-023 offers 12 GB per package with a 64-bit bus at 4.266 GHz, enough for packet buffering, DPI rule sets, and virtualized network functions at the network edge. Compared with a discrete DDR4 solution, the LPDDR5X device eliminates the DIMM connector, reduces the memory power rail from 1.2 V to the 1.01 V to 1.12 V window, and cuts PCB area with the 14 x 14 mm TFBGA. Networking SoCs with integrated LPDDR5X controllers can pair one or two of these devices with commodity NOR flash for boot. Use the WT commercial grade for indoor telecom equipment and the AIT grade for outdoor-mounted radios.
推荐
AR/VR and Wearable Compute
Augmented-reality headsets and advanced wearable compute platforms are among the most power-constrained high-bandwidth systems in existence: they must sustain multi-gigabyte-per-second memory traffic for display pipelines, SLAM tracking, and on-device AI within a battery and thermal budget measured in a few watts. The MT62F1536M64D8EK-023 addresses this directly, providing 12 GB at LPDDR5X 4.266 GHz speeds with LVSTL low-swing I/O that minimizes per-transfer energy, all in a compact 441-ball, 14 x 14 mm TFBGA that fits the tight board geometry of headset mainboards. The 1.01 V to 1.12 V DVFS-capable rail lets the system drop memory voltage aggressively during idle gaze periods, measurably extending session battery life. Design teams should co-locate the DRAM with the XR SoC and follow the controller's fly-by routing constraints to preserve signal integrity at full data rate.
推荐
推荐产品汇总
工程参考数据： MT62F1536M64D8EK-023 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MT62F1536M64D8EK-023 AIT:C | MT62F1536M64D8EK-023 AAT:C | MT62F1536M64D8EK-023 WT:B | MT62F1536M64D8EK-023 WT:D |
|---|---|---|---|---|---|
| Package | 441-TFBGA (14 x 14 mm) | 441-TFBGA (14 x 14 mm) - same | 441-TFBGA (14 x 14 mm) - same | 441-TFBGA (14 x 14 mm) - same | 441-TFBGA (14 x 14 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Memory Size | 96 Gbit (12 GB) | 96 Gbit (12 GB) | 96 Gbit (12 GB) | 96 Gbit (12 GB) | 96 Gbit (12 GB) |
| Organization | 1.5G x 64 | 1.5G x 64 | 1.5G x 64 | 1.5G x 64 | 1.5G x 64 |
| Clock Frequency | 4.266 GHz | 4.266 GHz | 4.266 GHz | 4.266 GHz | 4.266 GHz |
| Supply Voltage | 1.01 V to 1.12 V | 1.01 V to 1.12 V | 1.01 V to 1.12 V | 1.01 V to 1.12 V | 1.01 V to 1.12 V |
| Automotive Qualification | No (commercial WT grade) | Yes (AEC-Q100) | Extended temp, non-AEC-Q100 | No (commercial) | No (commercial) |
关键差异点
- Automotive-qualified drop-in variant available （对比 MT62F1536M64D8EK-023 WT:C (this part))
- Extended temperature coverage （对比 MT62F1536M64D8EK-023 AAT:C)
- Highest-tier LPDDR5X speed bin in family （对比 MT62F1536M32D4DS-023)
设计说明
LPDDR5X requires a PMIC with dedicated VDDQ/VDD2 rails supporting dynamic voltage scaling within the 1.01 V to 1.12 V window. Do not power this device from a fixed 1.1 V LDO without DVFS support - the LPDDR5X protocol assumes voltage-margining during training and low-power states. Sequence VDD before or with VDDQ per the Micron power-up specification, and place bulk and 100 nF decoupling capacitors at the ball-side vias to handle multi-ampere transient currents during burst accesses.
Route the CA and DQ buses as length-matched fly-by/point-to-point groups per the SoC memory-controller layout guide. LVSTL signaling at 4.266 GHz demands controlled impedance (typically 40-50 ohm single-ended per controller spec), reference-plane continuity on the layer transitions, and avoiding stubs on DQS strobes. Keep the DRAM within the SoC's maximum trace-length window (typically under 100 mm) and follow the controller's calibration requirements - LPDDR5X read/write training will fail margin checks on out-of-window routing.
Confirm the grade suffix before layout freeze: WT is commercial grade, AIT is AEC-Q100 automotive (-40C to +95C), and AAT extends to -40C to +105C. Mixing grades across a production batch can cause field failures in automotive or industrial environments. Also verify that your SoC's memory controller firmware supports the -023 speed bin and the C-stepping of this device; B and D steppings may require controller init table updates.
合规信息
RoHS/REACH status not stated in provided data for the WT grade. The AIT/AUT variants are AEC-Q100 qualified per Newark/Micron listings; the standard WT grade is not an automotive-qualified part.
