1EDN7146UXTSA1 vs 2EDN7434RXTMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ 1EDN7146UXTSA1 بواسطة Infineon و 2EDN7434RXTMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | 1EDN7146UXTSA1 | 2EDN7434RXTMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | Power MOSFET Drivers | Power MOSFET Drivers |
| حالة دورة الحياة | نشط | نشط |
| Driver Type | Single-channel high-side TDI gate driver | — |
| Maximum Blocking Voltage | 200 V | — |
| Input Configuration | Truly differential (TDI) | — |
| Output Current (Source / Sink) | 1.5 A / 2.5 A | — |
| Propagation Delay | [DATA_NEEDED: typical propagation delay ns] | — |
| زمن الصعود | [DATA_NEEDED: typical rise time ns] | — |
| زمن السقوط | [DATA_NEEDED: typical fall time ns] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range V] | — |
| نطاق درجة حرارة التشغيل | -40C to +125C | [DATA_NEEDED: operating temperature] |
| العلبة | PG-VSON-1 (6-pin with exposed pad) | PG-TSSOP-8 (3.0 x 3.0 mm) |
| نوع التركيب | Surface Mount | Surface Mount |
| Target Transistor | GaN SG HEMT or power MOSFET | — |
| مستوى MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| حالة RoHS | Compliant | Compliant |
| Topology Support | Half-bridge, low-side, high-side | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | EiceDRIVER 2EDN |
| Driver Configuration | — | Dual-channel low-side |
| Number of Drivers | — | 2 |
| Peak Output Current | — | 5 A (source/sink) |
| Rated Output Current | — | 4 A |
| Output Resistance (Low) | — | [DATA_NEEDED: output resistance Ron low] |
| Output Resistance (High) | — | [DATA_NEEDED: output resistance Ron high] |
| Propagation Delay (Typ.) | — | 19 ns |
| Input Logic Compatibility | — | LV-TTL, non-inverting |
| Absolute Max Input Voltage | — | -12 V to +22 V |
| Supply Voltage Range | — | [DATA_NEEDED: VDD range] |
| Active Output Voltage Clamping | — | Yes |