1EDN7146UXTSA1 vs 2EDN7434RXTMA1 比較

詳細並排比較 1EDN7146UXTSA1 由 Infineon 與 2EDN7434RXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1EDN7146UXTSA1 1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 ✓ 啟用中
Infineon
2EDN7434RXTMA1 2EDN7434RXTMA1 - 4A Dual Low-Side Gate Driver | Infineon

2EDN7434RXTMA1 - 4A Dual Low-Side Gate Driver | Infineon

2EDN7434RXTMA1 ✓ 啟用中

規格比較

參數 1EDN7146UXTSA1 2EDN7434RXTMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Type Single-channel high-side TDI gate driver —
Maximum Blocking Voltage 200 V —
Input Configuration Truly differential (TDI) —
Output Current (Source / Sink) 1.5 A / 2.5 A —
Propagation Delay [DATA_NEEDED: typical propagation delay ns] —
上升時間 [DATA_NEEDED: typical rise time ns] —
下降時間 [DATA_NEEDED: typical fall time ns] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range V] —
工作溫度範圍 -40C to +125C [DATA_NEEDED: operating temperature]
封裝 PG-VSON-1 (6-pin with exposed pad) PG-TSSOP-8 (3.0 x 3.0 mm)
安裝類型 Surface Mount Surface Mount
Target Transistor GaN SG HEMT or power MOSFET —
MSL 等級 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
RoHS 狀態 Compliant Compliant
Topology Support Half-bridge, low-side, high-side —
Manufacturer — Infineon Technologies
Part Family — EiceDRIVER 2EDN
Driver Configuration — Dual-channel low-side
Number of Drivers — 2
Peak Output Current — 5 A (source/sink)
Rated Output Current — 4 A
Output Resistance (Low) — [DATA_NEEDED: output resistance Ron low]
Output Resistance (High) — [DATA_NEEDED: output resistance Ron high]
Propagation Delay (Typ.) — 19 ns
Input Logic Compatibility — LV-TTL, non-inverting
Absolute Max Input Voltage — -12 V to +22 V
Supply Voltage Range — [DATA_NEEDED: VDD range]
Active Output Voltage Clamping — Yes

資料表與資源

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