1N5711 vs 1N5711SB مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ 1N5711 بواسطة STMicroelectronics و 1N5711SB بواسطة STMicroelectronics. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | 1N5711 | 1N5711SB |
|---|---|---|
| العلامة التجارية | STMicroelectronics | STMicroelectronics |
| الفئة | Diodes | Diodes |
| حالة دورة الحياة | نشط | نشط |
| Diode Type | Small-signal Schottky barrier (RF) diode | Small Signal Schottky Barrier Diode |
| Peak Reverse Voltage (VRRM) | 70 V | 70 V |
| Continuous Forward Current (IF) | 15 mA | — |
| Power Dissipation | 430 mW | 430 mW |
| Forward Voltage (VF) | 0.41 V (at 1 mA, per MACOM) | [DATA_NEEDED: forward voltage at rated current] |
| Total Capacitance | 2 pF | — |
| Junction Capacitance (Cj) | 1 pF | [DATA_NEEDED: junction capacitance] |
| Dynamic Resistance | 35 ohm | — |
| Breakdown Voltage (VB) | 70 V | — |
| Switching Speed | Picosecond class (ultrafast, no minority-carrier storage) | — |
| Junction Structure | Metal-to-silicon junction with PN guard ring | — |
| العلبة | DO-35 (DO-204AH) hermetic axial-lead glass | DO-35 (SOD-27) hermetic glass axial |
| نوع التركيب | Through-Hole | Through Hole |
| درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Reverse Leakage Current | [DATA_NEEDED: reverse leakage current at rated VR] | — |
| حالة RoHS | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Average Forward Current (IF(AV)) | — | 15 mA |
| Reverse Current (IR) | — | [DATA_NEEDED: reverse current at rated VR] |
| Reverse Recovery Time | — | Ultrafast (Schottky, no stored charge) |
| Configuration | — | Single |
| Junction Material | — | Metal-to-silicon junction |
| Primary Applications | — | UHF/VHF detection, mixing, switching, pulse shaping |
| Matched Batches | — | Available on request (ST) |