1N5711 vs 1N5711SB Karşılaştırma
Ayrıntılı yan yana karşılaştırma 1N5711 tarafından STMicroelectronics ve 1N5711SB tarafından STMicroelectronicsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | 1N5711 | 1N5711SB |
|---|---|---|
| Marka | STMicroelectronics | STMicroelectronics |
| Kategori | Diodes | Diodes |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Diode Type | Small-signal Schottky barrier (RF) diode | Small Signal Schottky Barrier Diode |
| Peak Reverse Voltage (VRRM) | 70 V | 70 V |
| Continuous Forward Current (IF) | 15 mA | — |
| Power Dissipation | 430 mW | 430 mW |
| Forward Voltage (VF) | 0.41 V (at 1 mA, per MACOM) | [DATA_NEEDED: forward voltage at rated current] |
| Total Capacitance | 2 pF | — |
| Junction Capacitance (Cj) | 1 pF | [DATA_NEEDED: junction capacitance] |
| Dynamic Resistance | 35 ohm | — |
| Breakdown Voltage (VB) | 70 V | — |
| Switching Speed | Picosecond class (ultrafast, no minority-carrier storage) | — |
| Junction Structure | Metal-to-silicon junction with PN guard ring | — |
| Paket | DO-35 (DO-204AH) hermetic axial-lead glass | DO-35 (SOD-27) hermetic glass axial |
| Montaj Türü | Through-Hole | Through Hole |
| İşletim Sıcaklığı | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Reverse Leakage Current | [DATA_NEEDED: reverse leakage current at rated VR] | — |
| RoHS Durumu | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Average Forward Current (IF(AV)) | — | 15 mA |
| Reverse Current (IR) | — | [DATA_NEEDED: reverse current at rated VR] |
| Reverse Recovery Time | — | Ultrafast (Schottky, no stored charge) |
| Configuration | — | Single |
| Junction Material | — | Metal-to-silicon junction |
| Primary Applications | — | UHF/VHF detection, mixing, switching, pulse shaping |
| Matched Batches | — | Available on request (ST) |