BAT43-R0 vs BAT42 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ BAT43-R0 بواسطة Taiwan Semiconductor و BAT42 بواسطة STMicroelectronics. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Taiwan Semiconductor
BAT43-R0 - 30V 200mA Schottky Diode DO-35 | Taiwan Semiconductor
BAT43-R0 ✓ نشطمقارنة المواصفات
| المعامل | BAT43-R0 | BAT42 |
|---|---|---|
| العلامة التجارية | Taiwan Semiconductor | STMicroelectronics |
| الفئة | Diodes | Diodes |
| حالة دورة الحياة | نشط | نشط |
| Diode Type | Small Signal Schottky Barrier | Small Signal Schottky Barrier |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | — |
| Average Forward Current (IF(AV)) | 200 mA | 200 mA |
| Maximum Forward Voltage (VF) | 1 V | — |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 4 A | 4 A |
| Power Dissipation | 200 mW | — |
| Junction Operating Temperature | -65C to +125C | up to 125 C |
| Reverse Recovery | Fast switching (Schottky, majority carrier) | — |
| العلبة | DO-35 axial glass (through hole) | DO-35 axial through-hole |
| نوع التركيب | Through Hole | Through Hole |
| Configuration | Single diode | Single diode |
| ESD Protection | Fast guard ring against excessive voltage (ESD) | — |
| حالة RoHS | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Forward Voltage Turn-On | Very low turn-on voltage | — |
| Capacitance (Cj) | [DATA_NEEDED: junction capacitance] | — |
| Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| Packaging Type | [DATA_NEEDED: tape/reel or bulk option] | — |
| Repetitive Reverse Voltage (VRRM) | — | 30 V |
| Forward Voltage (VF) | — | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current (IR) | — | [DATA_NEEDED: reverse leakage current] |
| Switching Speed | — | Fast (Schottky, no reverse recovery) |
| Technology | — | Metal-to-silicon Schottky junction with guard ring ESD protection |
| Application Class | — | General purpose fast switching |
| Manufacturer | — | STMicroelectronics |