BAT43-R0 vs BAT42 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BAT43-R0 disebabkan oleh Taiwan Semiconductor dan BAT42 disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BAT43-R0 BAT42
Merek Taiwan Semiconductor STMicroelectronics
Kategori Diodes Diodes
Status Lingkungan Hidup Aktif Aktif
Diode Type Small Signal Schottky Barrier Small Signal Schottky Barrier
Repetitive Peak Reverse Voltage (VRRM) 30 V —
Average Forward Current (IF(AV)) 200 mA 200 mA
Maximum Forward Voltage (VF) 1 V —
Non-Repetitive Peak Forward Surge Current (IFSM) 4 A 4 A
Power Dissipation 200 mW —
Junction Operating Temperature -65C to +125C up to 125 C
Reverse Recovery Fast switching (Schottky, majority carrier) —
Kemasan DO-35 axial glass (through hole) DO-35 axial through-hole
Jenis Pemasangan Through Hole Through Hole
Configuration Single diode Single diode
ESD Protection Fast guard ring against excessive voltage (ESD) —
Status RoHS Compliant [DATA_NEEDED: RoHS compliance status]
Forward Voltage Turn-On Very low turn-on voltage —
Capacitance (Cj) [DATA_NEEDED: junction capacitance] —
Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Packaging Type [DATA_NEEDED: tape/reel or bulk option] —
Repetitive Reverse Voltage (VRRM) — 30 V
Forward Voltage (VF) — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current (IR) — [DATA_NEEDED: reverse leakage current]
Switching Speed — Fast (Schottky, no reverse recovery)
Technology — Metal-to-silicon Schottky junction with guard ring ESD protection
Application Class — General purpose fast switching
Manufacturer — STMicroelectronics

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