BAT43-R0 vs BAT42 Comparação

Comparação detalhada lado a lado de BAT43-R0 por Taiwan Semiconductor e BAT42 por STMicroelectronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro BAT43-R0 BAT42
Marca Taiwan Semiconductor STMicroelectronics
Categoria Diodes Diodes
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,02 $0,02
Diode Type Small Signal Schottky Barrier Small Signal Schottky Barrier
Repetitive Peak Reverse Voltage (VRRM) 30 V —
Average Forward Current (IF(AV)) 200 mA 200 mA
Maximum Forward Voltage (VF) 1 V —
Non-Repetitive Peak Forward Surge Current (IFSM) 4 A 4 A
Power Dissipation 200 mW —
Junction Operating Temperature -65C to +125C up to 125 C
Reverse Recovery Fast switching (Schottky, majority carrier) —
Encapsulamento DO-35 axial glass (through hole) DO-35 axial through-hole
Tipo de montagem Through Hole Through Hole
Configuration Single diode Single diode
ESD Protection Fast guard ring against excessive voltage (ESD) —
Status RoHS Compliant [DATA_NEEDED: RoHS compliance status]
Forward Voltage Turn-On Very low turn-on voltage —
Capacitance (Cj) [DATA_NEEDED: junction capacitance] —
Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Packaging Type [DATA_NEEDED: tape/reel or bulk option] —
Repetitive Reverse Voltage (VRRM) — 30 V
Forward Voltage (VF) — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current (IR) — [DATA_NEEDED: reverse leakage current]
Switching Speed — Fast (Schottky, no reverse recovery)
Technology — Metal-to-silicon Schottky junction with guard ring ESD protection
Application Class — General purpose fast switching
Manufacturer — STMicroelectronics

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