BAT43-R0 vs BAT42 Vergleich

Detaillierter Direktvergleich von BAT43-R0 von Taiwan Semiconductor und BAT42 von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BAT43-R0 BAT42
Marke Taiwan Semiconductor STMicroelectronics
Kategorie Diodes Diodes
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,02 $0,02
Diode Type Small Signal Schottky Barrier Small Signal Schottky Barrier
Repetitive Peak Reverse Voltage (VRRM) 30 V —
Average Forward Current (IF(AV)) 200 mA 200 mA
Maximum Forward Voltage (VF) 1 V —
Non-Repetitive Peak Forward Surge Current (IFSM) 4 A 4 A
Power Dissipation 200 mW —
Junction Operating Temperature -65C to +125C up to 125 C
Reverse Recovery Fast switching (Schottky, majority carrier) —
Gehäuse DO-35 axial glass (through hole) DO-35 axial through-hole
Montageart Through Hole Through Hole
Configuration Single diode Single diode
ESD Protection Fast guard ring against excessive voltage (ESD) —
RoHS-Status Compliant [DATA_NEEDED: RoHS compliance status]
Forward Voltage Turn-On Very low turn-on voltage —
Capacitance (Cj) [DATA_NEEDED: junction capacitance] —
Leakage Current (IR) [DATA_NEEDED: reverse leakage current] —
Packaging Type [DATA_NEEDED: tape/reel or bulk option] —
Repetitive Reverse Voltage (VRRM) — 30 V
Forward Voltage (VF) — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current (IR) — [DATA_NEEDED: reverse leakage current]
Switching Speed — Fast (Schottky, no reverse recovery)
Technology — Metal-to-silicon Schottky junction with guard ring ESD protection
Application Class — General purpose fast switching
Manufacturer — STMicroelectronics

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