BAT43-R0 vs BAT42 비교
다음의 상세 나란히 비교: BAT43-R0 제조: Taiwan Semiconductor 및 BAT42 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BAT43-R0 | BAT42 |
|---|---|---|
| 브랜드 | Taiwan Semiconductor | STMicroelectronics |
| 카테고리 | Diodes | Diodes |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.02 | $0.02 |
| Diode Type | Small Signal Schottky Barrier | Small Signal Schottky Barrier |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | — |
| Average Forward Current (IF(AV)) | 200 mA | 200 mA |
| Maximum Forward Voltage (VF) | 1 V | — |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 4 A | 4 A |
| Power Dissipation | 200 mW | — |
| Junction Operating Temperature | -65C to +125C | up to 125 C |
| Reverse Recovery | Fast switching (Schottky, majority carrier) | — |
| 패키지 | DO-35 axial glass (through hole) | DO-35 axial through-hole |
| 실장 유형 | Through Hole | Through Hole |
| Configuration | Single diode | Single diode |
| ESD Protection | Fast guard ring against excessive voltage (ESD) | — |
| RoHS 상태 | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Forward Voltage Turn-On | Very low turn-on voltage | — |
| Capacitance (Cj) | [DATA_NEEDED: junction capacitance] | — |
| Leakage Current (IR) | [DATA_NEEDED: reverse leakage current] | — |
| Packaging Type | [DATA_NEEDED: tape/reel or bulk option] | — |
| Repetitive Reverse Voltage (VRRM) | — | 30 V |
| Forward Voltage (VF) | — | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current (IR) | — | [DATA_NEEDED: reverse leakage current] |
| Switching Speed | — | Fast (Schottky, no reverse recovery) |
| Technology | — | Metal-to-silicon Schottky junction with guard ring ESD protection |
| Application Class | — | General purpose fast switching |
| Manufacturer | — | STMicroelectronics |