EP2A25F672C8N vs EP2A25F672I6 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ EP2A25F672C8N بواسطة Intel و EP2A25F672I6 بواسطة Intel. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | EP2A25F672C8N | EP2A25F672I6 |
|---|---|---|
| العلامة التجارية | Intel | Intel |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | NRND | NRND |
| Family | APEX II | APEX II |
| Technology Node | 0.15 um all-layer copper process | — |
| System Gates | 900,000 | — |
| Logic Elements / Cells | 24,320 | — |
| Maximum Internal Frequency | 333 MHz | — |
| Propagation Delay | 1.69 ns | — |
| User I/Os | 492 | — |
| العلبة | 672-ball FC-FBGA (FineLine BGA) | 672-ball FineLine BGA (FBGA-672) |
| Package Body Size | 27 x 27 mm | — |
| Ball Pitch | 1.0 mm | — |
| Core Supply Voltage | 1.5 V | — |
| Speed Grade | C8 | 6 |
| درجة حرارة التشغيل | 0 C to 85 C (commercial) | — |
| Multi-Gigabit Transceiver Rate | Up to 1 Gbps per channel | — |
| نوع التركيب | Surface Mount | Surface Mount (BGA) |
| حالة RoHS | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Lead-Free Suffix | N (lead-free, Pb-free finish) | — |
| Logic Elements (typical gates) | — | 25,000 |
| Fabric Architecture | — | SRAM-based LUT |
| Process Technology | — | 0.18 µm CMOS |
| Core Voltage | — | 1.5 V |
| Configuration Method | — | External SRAM configuration device (EPC series) |
| Temperature Grade | — | Industrial (-40 °C to +100 °C ambient) |
| Embedded Memory | — | Embedded System Blocks (ESB), dual-port RAM / CAM |
| DSP Blocks | — | MultiCore dedicated multipliers |
| Boundary Scan | — | JTAG (IEEE 1149.1) compliant |
| Clock Management | — | Dedicated PLL / clock tree circuitry |
| I/O Bank Count | — | [DATA_NEEDED: number of user I/O banks] |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |
| مستوى MSL | — | [DATA_NEEDED: moisture sensitivity level] |