K9DVGB8U5M vs K9DVGY8J5M مقارنة

مقارنة تفصيلية جنبًا إلى جنب لـ K9DVGB8U5M بواسطة Samsung Electronics و K9DVGY8J5M بواسطة Samsung Electronics. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.

Samsung Electronics
K9DVGB8U5M K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M ✓ نشط
Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ نشط

مقارنة المواصفات

المعامل K9DVGB8U5M K9DVGY8J5M
العلامة التجارية Samsung Electronics Samsung Electronics
الفئة Memory ICs Memory ICs
حالة دورة الحياة نشط نشط
نوع الذاكرة NAND Flash —
التنظيم [DATA_NEEDED: capacity organization] —
الواجهة Asynchronous x8-bit I/O —
جهد التغذية [DATA_NEEDED: VCC range] —
العلبة [DATA_NEEDED: package type and dimensions] —
نوع التركيب Surface Mount Surface Mount
Page Size [DATA_NEEDED: main page size] —
Block Size [DATA_NEEDED: erase block size] —
Read Time (tR) [DATA_NEEDED: page read cycle time] [DATA_NEEDED: tR typical/us]
Program Time (tPROG) [DATA_NEEDED: page program time] —
Erase Time (tBERS) [DATA_NEEDED: block erase time] —
Endurance [DATA_NEEDED: program/erase cycles] —
Data Retention [DATA_NEEDED: retention specification] —
درجة حرارة التشغيل [DATA_NEEDED: temperature range] [DATA_NEEDED: operating temperature range]
Access Interface Signals CLE, ALE, WE, RE, CE, R/B, WP —
Bad Block Management Host-managed (controller ECC and bad-block table required) —
حالة RoHS [DATA_NEEDED: RoHS compliance] [DATA_NEEDED: RoHS status]
Manufacturer — Samsung Electronics
Product Type — Raw NAND Flash Memory
NAND Technology — Samsung V-NAND (3D TLC)
Flash ID — EC519A3F8CCB
Density — [DATA_NEEDED: die density (Gb)]
Organization (Page/Block) — [DATA_NEEDED: page and block organization]
نوع الواجهة — [DATA_NEEDED: interface (toggle DDR / async)]
Supply Voltage (VCC) — [DATA_NEEDED: VCC voltage]
Supply Voltage (VCCQ) — [DATA_NEEDED: VCCQ voltage]
Program Page Time (tPROG) — [DATA_NEEDED: tPROG typical/us]
Block Erase Time (tBERS) — [DATA_NEEDED: tBERS typical/us]
Program/Erase Endurance — [DATA_NEEDED: P/E cycle endurance]
Package Type — [DATA_NEEDED: package type and dimensions]

أوراق البيانات والموارد

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