MPX12D vs MPX2010DP مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MPX12D بواسطة NXP Semiconductors و MPX2010DP بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | MPX12D | MPX2010DP |
|---|---|---|
| العلامة التجارية | NXP Semiconductors | NXP Semiconductors |
| الفئة | Pressure Sensors | Pressure Sensors |
| حالة دورة الحياة | نشط | نشط |
| Pressure Type | Differential | — |
| Operating Pressure | 1.45 PSI (10 kPa) | — |
| Maximum Overload Pressure | 10.88 PSI (75 kPa) | — |
| Full-Scale Output Voltage | 0 to 55 mV (at 3 V supply) | — |
| جهد التغذية | 3 V typical | 10 V DC typical (max 16 V) |
| Accuracy | ±5% | — |
| نوع الخرج | Wheatstone Bridge (uncompensated) | Analog voltage, Wheatstone bridge (mV level) |
| Termination Style | PCB (through-hole) | — |
| العلبة | 4-SIP Module | — |
| Port Size | Female, 0.136 in (3.45 mm) | — |
| Port Style | No Port (base-side pressure inlet) | — |
| Technology | Piezoresistive MEMS silicon shear strain gauge | Piezoresistive (silicon strain gauge bridge) |
| Compensation | Uncompensated (external compensation required) | — |
| درجة حرارة التشغيل | 0 °C to +85 °C | -40 °C to +125 °C |
| حالة RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant |
| نوع التركيب | Through-Hole | — |
| نوع المستشعر | — | Differential Pressure Sensor |
| Pressure Range | — | 0 to 10 kPa (0 to 1.45 PSI) |
| Typical Full-Scale Span | — | 25 mV at 10 V excitation |
| Zero Pressure Offset | — | 0 mV nominally (±1.0 mV max) |
| Linearity | — | ±0.05% (typ) |
| Temperature Compensation | — | 0 °C to +85 °C (on-chip) |
| Response Time | — | 1.0 ms (typical) |
| Maximum Overpressure | — | 75 kPa |
| Burst Pressure | — | 200 kPa |
| Port Configuration | — | Dual ports (differential), 0.19 inch / 4.93 mm tubes |
| Package / Mounting | — | 4-SIP Module (through-hole with axial tubes) |
| Media Compatibility | — | Dry air or non-corrosive gas |