MPX12D vs MPX2010DP 비교
다음의 상세 나란히 비교: MPX12D 제조: NXP Semiconductors 및 MPX2010DP 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MPX12D | MPX2010DP |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | Pressure Sensors | Pressure Sensors |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $4.75 | $8.50 |
| Pressure Type | Differential | — |
| Operating Pressure | 1.45 PSI (10 kPa) | — |
| Maximum Overload Pressure | 10.88 PSI (75 kPa) | — |
| Full-Scale Output Voltage | 0 to 55 mV (at 3 V supply) | — |
| 공급 전압 | 3 V typical | 10 V DC typical (max 16 V) |
| Accuracy | ±5% | — |
| 출력 유형 | Wheatstone Bridge (uncompensated) | Analog voltage, Wheatstone bridge (mV level) |
| Termination Style | PCB (through-hole) | — |
| 패키지 | 4-SIP Module | — |
| Port Size | Female, 0.136 in (3.45 mm) | — |
| Port Style | No Port (base-side pressure inlet) | — |
| Technology | Piezoresistive MEMS silicon shear strain gauge | Piezoresistive (silicon strain gauge bridge) |
| Compensation | Uncompensated (external compensation required) | — |
| 동작 온도 | 0 °C to +85 °C | -40 °C to +125 °C |
| RoHS 상태 | [DATA_NEEDED: RoHS compliance status] | Compliant |
| 실장 유형 | Through-Hole | — |
| 센서 유형 | — | Differential Pressure Sensor |
| Pressure Range | — | 0 to 10 kPa (0 to 1.45 PSI) |
| Typical Full-Scale Span | — | 25 mV at 10 V excitation |
| Zero Pressure Offset | — | 0 mV nominally (±1.0 mV max) |
| Linearity | — | ±0.05% (typ) |
| Temperature Compensation | — | 0 °C to +85 °C (on-chip) |
| Response Time | — | 1.0 ms (typical) |
| Maximum Overpressure | — | 75 kPa |
| Burst Pressure | — | 200 kPa |
| Port Configuration | — | Dual ports (differential), 0.19 inch / 4.93 mm tubes |
| Package / Mounting | — | 4-SIP Module (through-hole with axial tubes) |
| Media Compatibility | — | Dry air or non-corrosive gas |