MPX12D vs MPX2010DP 比較
詳細な並列比較: MPX12D メーカー: NXP Semiconductors および MPX2010DP メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | MPX12D | MPX2010DP |
|---|---|---|
| ブランド | NXP Semiconductors | NXP Semiconductors |
| カテゴリ | Pressure Sensors | Pressure Sensors |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $4.75 | $8.50 |
| Pressure Type | Differential | — |
| Operating Pressure | 1.45 PSI (10 kPa) | — |
| Maximum Overload Pressure | 10.88 PSI (75 kPa) | — |
| Full-Scale Output Voltage | 0 to 55 mV (at 3 V supply) | — |
| 電源電圧 | 3 V typical | 10 V DC typical (max 16 V) |
| Accuracy | ±5% | — |
| 出力タイプ | Wheatstone Bridge (uncompensated) | Analog voltage, Wheatstone bridge (mV level) |
| Termination Style | PCB (through-hole) | — |
| パッケージ | 4-SIP Module | — |
| Port Size | Female, 0.136 in (3.45 mm) | — |
| Port Style | No Port (base-side pressure inlet) | — |
| Technology | Piezoresistive MEMS silicon shear strain gauge | Piezoresistive (silicon strain gauge bridge) |
| Compensation | Uncompensated (external compensation required) | — |
| 動作温度 | 0 °C to +85 °C | -40 °C to +125 °C |
| RoHS ステータス | [DATA_NEEDED: RoHS compliance status] | Compliant |
| 実装タイプ | Through-Hole | — |
| センサタイプ | — | Differential Pressure Sensor |
| Pressure Range | — | 0 to 10 kPa (0 to 1.45 PSI) |
| Typical Full-Scale Span | — | 25 mV at 10 V excitation |
| Zero Pressure Offset | — | 0 mV nominally (±1.0 mV max) |
| Linearity | — | ±0.05% (typ) |
| Temperature Compensation | — | 0 °C to +85 °C (on-chip) |
| Response Time | — | 1.0 ms (typical) |
| Maximum Overpressure | — | 75 kPa |
| Burst Pressure | — | 200 kPa |
| Port Configuration | — | Dual ports (differential), 0.19 inch / 4.93 mm tubes |
| Package / Mounting | — | 4-SIP Module (through-hole with axial tubes) |
| Media Compatibility | — | Dry air or non-corrosive gas |