MPX2010DP vs MPX12D مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MPX2010DP بواسطة NXP Semiconductors و MPX12D بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | MPX2010DP | MPX12D |
|---|---|---|
| العلامة التجارية | NXP Semiconductors | NXP Semiconductors |
| الفئة | Pressure Sensors | Pressure Sensors |
| حالة دورة الحياة | نشط | نشط |
| نوع المستشعر | Differential Pressure Sensor | — |
| Pressure Range | 0 to 10 kPa (0 to 1.45 PSI) | — |
| Technology | Piezoresistive (silicon strain gauge bridge) | Piezoresistive MEMS silicon shear strain gauge |
| نوع الخرج | Analog voltage, Wheatstone bridge (mV level) | Wheatstone Bridge (uncompensated) |
| Typical Full-Scale Span | 25 mV at 10 V excitation | — |
| Zero Pressure Offset | 0 mV nominally (±1.0 mV max) | — |
| جهد التغذية | 10 V DC typical (max 16 V) | 3 V typical |
| Linearity | ±0.05% (typ) | — |
| Temperature Compensation | 0 °C to +85 °C (on-chip) | — |
| درجة حرارة التشغيل | -40 °C to +125 °C | 0 °C to +85 °C |
| Response Time | 1.0 ms (typical) | — |
| Maximum Overpressure | 75 kPa | — |
| Burst Pressure | 200 kPa | — |
| Port Configuration | Dual ports (differential), 0.19 inch / 4.93 mm tubes | — |
| Package / Mounting | 4-SIP Module (through-hole with axial tubes) | — |
| Media Compatibility | Dry air or non-corrosive gas | — |
| حالة RoHS | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Pressure Type | — | Differential |
| Operating Pressure | — | 1.45 PSI (10 kPa) |
| Maximum Overload Pressure | — | 10.88 PSI (75 kPa) |
| Full-Scale Output Voltage | — | 0 to 55 mV (at 3 V supply) |
| Accuracy | — | ±5% |
| Termination Style | — | PCB (through-hole) |
| العلبة | — | 4-SIP Module |
| Port Size | — | Female, 0.136 in (3.45 mm) |
| Port Style | — | No Port (base-side pressure inlet) |
| Compensation | — | Uncompensated (external compensation required) |
| نوع التركيب | — | Through-Hole |