RTAX2000S-1CQ352V vs RTAX2000D-1CQ352V مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ RTAX2000S-1CQ352V بواسطة Microchip Technology و RTAX2000D-1CQ352V بواسطة Microchip Technology. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Microchip Technology
RTAX2000S-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CQ352V ✓ نشطMicrochip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ نشطمقارنة المواصفات
| المعامل | RTAX2000S-1CQ352V | RTAX2000D-1CQ352V |
|---|---|---|
| العلامة التجارية | Microchip Technology | Microchip Technology |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | نشط | نشط |
| Equivalent System Gates | 2,000,000 gates | — |
| Logic Cells | 32,256 cells | 29,568 |
| Configurable Logic Blocks (CLBs) | 21,504 CLBs | — |
| Process Technology | Digital CMOS | — |
| Speed Grade | -1 | -1 |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | — |
| العلبة | CQ352 ceramic QFP, 352 pins | CQFP-352 (CQ352), ceramic |
| نوع التركيب | Surface Mount | Surface Mount |
| Configuration | Live at power-up, single-chip | Live at power-up, single-chip, no external configuration device |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC protection |
| Core Voltage | [DATA_NEEDED: core voltage] | — |
| I/O Voltage | [DATA_NEEDED: I/O voltage] | — |
| درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Radiation Tolerance (TID) | [DATA_NEEDED: TID rating] | — |
| مستوى MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| حالة RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Equivalent Gates | — | 2,000,000 |
| CLBs | — | 19,712 |
| Core Supply Voltage | — | 1.425 V to 1.575 V (nominal 1.5 V) |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Technology | — | Digital CMOS, antifuse (nonvolatile) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose | — | 200 krad (Si) |
| Screening | — | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) |