RTAX2000S-1CQ352V vs RTAX2000D-1CQ352V तुलना
विस्तृत दोनों ओर की तुलना RTAX2000S-1CQ352V द्वारा Microchip Technology और RTAX2000D-1CQ352V द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX2000S-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000S-1CQ352V ✓ सक्रियMicrochip Technology
RTAX2000D-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000D-1CQ352V ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX2000S-1CQ352V | RTAX2000D-1CQ352V |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Equivalent System Gates | 2,000,000 gates | — |
| Logic Cells | 32,256 cells | 29,568 |
| Configurable Logic Blocks (CLBs) | 21,504 CLBs | — |
| Process Technology | Digital CMOS | — |
| Speed Grade | -1 | -1 |
| Family | RTAX-S/SL Radiation-Tolerant FPGAs | — |
| पैकेज | CQ352 ceramic QFP, 352 pins | CQFP-352 (CQ352), ceramic |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Configuration | Live at power-up, single-chip | Live at power-up, single-chip, no external configuration device |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC protection |
| Core Voltage | [DATA_NEEDED: core voltage] | — |
| I/O Voltage | [DATA_NEEDED: I/O voltage] | — |
| ऑपरेटिंग तापमान | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Radiation Tolerance (TID) | [DATA_NEEDED: TID rating] | — |
| MSL स्तर | [DATA_NEEDED: moisture sensitivity level] | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Equivalent Gates | — | 2,000,000 |
| CLBs | — | 19,712 |
| Core Supply Voltage | — | 1.425 V to 1.575 V (nominal 1.5 V) |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Technology | — | Digital CMOS, antifuse (nonvolatile) |
| Total Ionizing Dose (Functional) | — | 300 krad (Si) |
| Total Ionizing Dose | — | 200 krad (Si) |
| Screening | — | RTAX-D (Condition A, tighter ICCA limits at 125C final electrical test) |