UCC21550BDWR vs UCC21550ADWR مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ UCC21550BDWR بواسطة Texas Instruments و UCC21550ADWR بواسطة Texas Instruments. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ نشطTexas Instruments
UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments
UCC21550ADWR ✓ نشطمقارنة المواصفات
| المعامل | UCC21550BDWR | UCC21550ADWR |
|---|---|---|
| العلامة التجارية | Texas Instruments | Texas Instruments |
| الفئة | Power MOSFET Drivers | Power MOSFET Drivers |
| حالة دورة الحياة | نشط | نشط |
| تكوين الخرج | Dual-channel (dual low-side, dual high-side, or half-bridge) | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling, reinforced isolation | Reinforced, capacitive coupling |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns | — |
| VDD Output Supply Range | Up to 25 V | — |
| UVLO Threshold | 8 V (VDD UVLO) | — |
| Programmable Dead Time | Yes | — |
| Disable Function | Yes | Yes (DISABLE pin) |
| Junction Temperature Range | -40 C to +150 C | -40C to +150C |
| العلبة | 16-SOIC (DW) | 16-SOIC (DW) |
| نوع التركيب | Surface Mount | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT | Power MOSFET, SiC, GaN, IGBT |
| حالة RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Number of Channels | — | 2 (dual) |
| Configuration | — | Dual low-side, dual high-side, or half-bridge |
| CMTI | — | > 125 V/ns |
| Max VDD Output Supply | — | 25 V |
| UVLO Threshold Option | — | 5 V |
| Dead Time | — | Programmable |