UCC21550BDWR vs UCC21550ADWR Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng UCC21550BDWR sa pamamagitan ng Texas Instruments at UCC21550ADWR sa pamamagitan ng Texas Instruments. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ NakahandaTexas Instruments
UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments
UCC21550ADWR ✓ NakahandaPagsanggunian na paghahambing
| Parametro | UCC21550BDWR | UCC21550ADWR |
|---|---|---|
| Brand | Texas Instruments | Texas Instruments |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Output Kumpigurasyon | Dual-channel (dual low-side, dual high-side, or half-bridge) | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling, reinforced isolation | Reinforced, capacitive coupling |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns | — |
| VDD Output Supply Range | Up to 25 V | — |
| UVLO Threshold | 8 V (VDD UVLO) | — |
| Programmable Dead Time | Yes | — |
| Disable Function | Yes | Yes (DISABLE pin) |
| Junction Temperature Range | -40 C to +150 C | -40C to +150C |
| Packhaging | 16-SOIC (DW) | 16-SOIC (DW) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT | Power MOSFET, SiC, GaN, IGBT |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Number of Channels | — | 2 (dual) |
| Configuration | — | Dual low-side, dual high-side, or half-bridge |
| CMTI | — | > 125 V/ns |
| Max VDD Output Supply | — | 25 V |
| UVLO Threshold Option | — | 5 V |
| Dead Time | — | Programmable |