UCC21550BDWR vs UCC21550ADWR Karşılaştırma
Ayrıntılı yan yana karşılaştırma UCC21550BDWR tarafından Texas Instruments ve UCC21550ADWR tarafından Texas InstrumentsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ AktifTexas Instruments
UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments
UCC21550ADWR ✓ AktifÖzellik Karşılaştırması
| Parametre | UCC21550BDWR | UCC21550ADWR |
|---|---|---|
| Marka | Texas Instruments | Texas Instruments |
| Kategori | Power MOSFET Drivers | Power MOSFET Drivers |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Çıkış Konfigürasyonu | Dual-channel (dual low-side, dual high-side, or half-bridge) | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling, reinforced isolation | Reinforced, capacitive coupling |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns | — |
| VDD Output Supply Range | Up to 25 V | — |
| UVLO Threshold | 8 V (VDD UVLO) | — |
| Programmable Dead Time | Yes | — |
| Disable Function | Yes | Yes (DISABLE pin) |
| Junction Temperature Range | -40 C to +150 C | -40C to +150C |
| Paket | 16-SOIC (DW) | 16-SOIC (DW) |
| Montaj Türü | Surface Mount | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT | Power MOSFET, SiC, GaN, IGBT |
| RoHS Durumu | [DATA_NEEDED: RoHS status] | Compliant |
| Number of Channels | — | 2 (dual) |
| Configuration | — | Dual low-side, dual high-side, or half-bridge |
| CMTI | — | > 125 V/ns |
| Max VDD Output Supply | — | 25 V |
| UVLO Threshold Option | — | 5 V |
| Dead Time | — | Programmable |