UCC21550BDWR vs UCC21550ADWR तुलना
विस्तृत दोनों ओर की तुलना UCC21550BDWR द्वारा Texas Instruments और UCC21550ADWR द्वारा Texas Instruments. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Texas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ सक्रियTexas Instruments
UCC21550ADWR - 4A/6A Isolated Dual Gate Driver | Texas Instruments
UCC21550ADWR ✓ सक्रियविशेषता तुलना
| पैरामीटर | UCC21550BDWR | UCC21550ADWR |
|---|---|---|
| ब्रांड | Texas Instruments | Texas Instruments |
| श्रेणी | Power MOSFET Drivers | Power MOSFET Drivers |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| आउटपुट कॉन्फ़िगरेशन | Dual-channel (dual low-side, dual high-side, or half-bridge) | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 6 A | 6 A |
| Isolation Type | Capacitive coupling, reinforced isolation | Reinforced, capacitive coupling |
| Isolation Voltage | 5000 Vrms | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | > 125 V/ns | — |
| VDD Output Supply Range | Up to 25 V | — |
| UVLO Threshold | 8 V (VDD UVLO) | — |
| Programmable Dead Time | Yes | — |
| Disable Function | Yes | Yes (DISABLE pin) |
| Junction Temperature Range | -40 C to +150 C | -40C to +150C |
| पैकेज | 16-SOIC (DW) | 16-SOIC (DW) |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Driven Devices | Power MOSFET, SiC MOSFET, GaN FET, IGBT | Power MOSFET, SiC, GaN, IGBT |
| RoHS स्थिति | [DATA_NEEDED: RoHS status] | Compliant |
| Number of Channels | — | 2 (dual) |
| Configuration | — | Dual low-side, dual high-side, or half-bridge |
| CMTI | — | > 125 V/ns |
| Max VDD Output Supply | — | 25 V |
| UVLO Threshold Option | — | 5 V |
| Dead Time | — | Programmable |