IPG20N06S2L65AATMA1 - 55V Dual N-Ch OptiMOS 20A | Infineon
MPN: IPG20N06S2L65AATMA1 ✓ نشطIPG20N06S2L65AATMA1 نظرة عامة
A MOSFET array is a semiconductor device that integrates two or more MOSFET transistors into a single package, enabling half-bridge, full-bridge, or synchronous-rectifier topologies without requiring multiple discrete components. The dual-channel configuration reduces PCB area, simplifies gate-drive routing, and improves thermal coupling between channels. The Infineon OptiMOS family uses advanced trench technology to minimize on-state resistance and gate charge, placing the device in the power MOSFET -> discrete semiconductor -> semiconductor hierarchy of components.
Key specifications include a logic-level gate drive (VGS(th) compatible with 3.3 V and 5 V microcontrollers), 100% avalanche-tested ruggedness, and AEC-Q101 qualification for automotive environments. The wettable-flank package terminals enable automatic optical inspection (AOI) of solder joints, critical for high-reliability automotive manufacturing lines. MSL1 rating allows peak reflow up to 260 C, with a maximum operating temperature of 175 C.
Typical applications include automotive solenoid control, LED lighting drivers, DC-DC converter high-side/low-side switches, and motor-driver H-bridges. The dual-channel architecture makes it especially well-suited for synchronous buck converters where two MOSFETs are required in a single footprint.
When designing with this device, ensure the gate-drive voltage meets the logic-level VGS(th) requirement and that the PCB thermal pad is properly soldered to maximize heat dissipation. The wettable flanks require no special solder paste or stencil changes versus standard DFN packages.
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الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع IPG20N06S2L65AATMA1 (نفس عامل الشكل والبصمة) — يختلف في Technology, MSL Level, FET Type, Operating Temperature Range, Package.
IPG20N04S4L11ATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IPG20N06S2L65ATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←IPG16N10S461AATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←BSC027N06LS5ATMA1
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←BSZ065N03LSATMA1
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عرض ورقة البيانات ←IPG20N06S2L65AATMA1 الحدود القصوى والخصائص الكهربائية
| Manufacturer | Infineon Technologies |
| Series | OptiMOS |
| FET Type | Dual N-Channel (Half Bridge / Independent) |
| Drain-to-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) | 20 A (per channel) |
| Power Dissipation (PD) | 43 W |
| Gate Threshold (VGS(th)) | Logic-Level |
| Technology | OptiMOS Trench MOSFET |
| العلبة | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| نوع التركيب | Surface Mount |
| درجة حرارة التشغيل | -55 C to +175 C |
| AEC-Q101 Qualification | Yes |
| مستوى MSL | MSL1 (peak reflow 260 C) |
| حالة RoHS | Compliant (Green Product) |
| Avalanche Tested | 100% (per datasheet) |
| AOI Compatible | Yes (wettable flank) |
تكوين أطراف IPG20N06S2L65AATMA1
| دبوس 1 | Source 1 (S1) — Source of MOSFET 1, connected to thermal pad |
| دبوس 2 | Gate 1 (G1) — Gate of MOSFET 1, logic-level compatible |
| دبوس 3 | Drain 1 (D1) — Drain of MOSFET 1 |
| دبوس 4 | Drain 2 (D2) — Drain of MOSFET 2 |
| دبوس 5 | Gate 2 (G2) — Gate of MOSFET 2, logic-level compatible |
| دبوس 6 | Source 2 (S2) — Source of MOSFET 2 |
| دبوس 7 | NC — Not connected (per datasheet) |
| دبوس 8 | NC — Not connected (per datasheet) |
| دبوس EP | Exposed Pad / Drain — Thermal pad, internally connected to drains for heat dissipation |
التطبيقات النموذجية
IPG20N06S2L65AATMA1 مناسب لـ 6 التطبيقs: Automotive Solenoid Control, Automotive LED Lighting Drivers, Synchronous Buck DC-DC Converters, H-Bridge Motor Drivers, Battery Management System (BMS) Switching, Industrial 24V Solenoid and Valve Control.
Automotive Solenoid Control
The IPG20N06S2L65AATMA1 is purpose-built for 12 V and 24 V automotive solenoid drivers. Its 55 V VDS rating tolerates 24 V bus transients and load-dump events up to 35 V, while the 20 A continuous drain current handles typical solenoid inrush. The logic-level gate threshold allows direct drive from 5 V MCU GPIO without an external gate driver, and AEC-Q101 qualification is mandatory for under-hood deployment. Both channels can be configured as independent low-side switches for dual-solenoid valves.
موصى به
Automotive LED Lighting Drivers
The IPG20N06S2L65AATMA1 serves as a high-side or low-side switch in automotive LED headlight and tail-light driver modules. Per the Infineon product page, the part is recommended for LED lighting applications, where the dual-channel configuration drives separate LED strings with synchronized PWM dimming. The logic-level gate allows direct MCU PWM control at frequencies up to 25 kHz, while 100% avalanche testing protects against LED string short-circuit transients.
موصى به
Synchronous Buck DC-DC Converters
The IPG20N06S2L65AATMA1 dual-MOSFET architecture is ideal for synchronous buck converter high-side and low-side positions. The matched channel parameters simplify gate-drive timing and reduce body-diode conduction losses. At 20 A per channel, the part supports 60-100 W converter designs for automotive point-of-load regulation. The wettable-flank TDSON-8 EP package minimizes parasitic source inductance, critical for clean switching transitions at 100-500 kHz operation.
موصى به
H-Bridge Motor Drivers
The IPG20N06S2L65AATMA1 supports H-bridge motor-driver topologies for small DC motors, such as window lift, seat adjustment, and HVAC blower modules. Each channel handles 20 A continuous, sufficient for sub-100 W motors. The dual-MOSFET package reduces PCB footprint by 50% versus four discrete DPAKs, while the matched on-resistance between channels ensures balanced motor drive and reduced torque ripple.
موصى به
Battery Management System (BMS) Switching
In 12 V/24 V automotive BMS modules, the IPG20N06S2L65AATMA1 provides pre-charge and discharge MOSFET functions. The 55 V VDS rating covers the full automotive battery voltage range including transients. Dual-channel integration lets one package handle both pre-charge and main discharge paths, while AEC-Q101 and 175 C junction temperature ratings ensure reliability in harsh under-hood environments near battery packs.
موصى به
Industrial 24V Solenoid and Valve Control
Beyond automotive, the IPG20N06S2L65AATMA1 suits industrial 24 V solenoid and pneumatic valve control panels. The 55 V VDS rating handles 24 V industrial bus plus inductive spike transients. Each channel can switch an independent solenoid up to 20 A, enabling compact multi-valve manifolds. The wettable-flank AOI-compatible package supports high-volume automated assembly common in industrial control manufacturing.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ IPG20N06S2L65AATMA1 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | IPG20N04S4L11ATMA1 | IPG20N06S2L65ATMA1 | IPG16N10S461AATMA1 | BSC027N06LS5ATMA1 | BSZ065N03LSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-10 | PG-TDSON-8-10 - same | PG-TDSON-8-10 - same | PG-TDSON-8-10 - same | PG-TDSON-8-10 - same | PG-TDSON-8-10 - same |
| Configuration | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Single N-Channel | Single N-Channel |
| Drain-Source Voltage (VDS) | 55 V | 40 V | 55 V | 100 V | 60 V | 30 V |
| Continuous Drain Current (ID) | 20 A | 20 A | 20 A | 16 A | 27 A (single) | 65 A (single) |
| Gate Threshold Level | Logic-Level | Logic-Level | Logic-Level | Logic-Level | Logic-Level | Logic-Level |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
| Wettable Flank | Yes | Yes | Yes | Yes | Yes | Yes |
أبرز الفروقات
- Dual-channel logic-level MOSFET in compact TDSON-8 EP footprint (مقابلDiscrete DPAK solutions)
- 55 V VDS rating optimized for 24 V automotive systems (مقابلIPG20N04S4L-11 (40 V VDS))
- 100% avalanche-tested ruggedness (مقابلStandard non-avalanche-rated MOSFETs)
ملاحظات التصميم
Estimated: At 20 A continuous drain current per channel with 55 V VDS, power dissipation depends on RDS(on) and duty cycle. The TDSON-8 EP package has a junction-to-ambient thermal resistance of approximately 50 C/W on a 1 sq. inch copper pour. Designers should compute junction temperature rise using PD = 2 x I^2 x RDS(on) x duty for both channels combined, and ensure the thermal pad is soldered to maximize heat transfer. At maximum dissipation, a heatsink or 4+ square inches of copper is recommended.
The wettable-flank TDSON-8-10 package requires no special solder paste or stencil changes versus standard DFN/QFN packages, but the side-wettable flanks must be visible after reflow for AOI inspection. Place gate-drive traces as short and direct as possible to minimize parasitic inductance, which can cause ringing at high di/dt switching transitions. The exposed thermal pad should connect to a copper pour with multiple thermal vias (typically 9-16 vias in a 3x3 or 4x4 pattern) to spread heat into internal PCB layers.
Do not exceed the 55 V VDS maximum, including inductive spike transients from solenoids and motors. Always add a snubber or TVS diode across inductive loads. The logic-level gate threshold means the MOSFET can partially turn on with weak gate drive; ensure gate-drive signals swing fully between 0 V and at least 4.5 V for low RDS(on). For dual-channel operation, verify both channels share the same source reference to avoid ground-loop issues in half-bridge topologies.
معلومات الامتثال
AEC-Q101 qualified for automotive. Green Product (RoHS compliant) per digchip datasheet listing. MSL1 with peak reflow 260 C. 100% avalanche tested.
