MT41K256M16TW-093 - 4Gbit DDR3L SDRAM 1.066GHz | Micron
MPN: MT41K256M16TW-093 ✓ نشط| الكمية | سعر الوحدة | الإجمالي |
|---|---|---|
| 1 | $22.23 | $22.23 |
| 10 | $20.5 | $205.00 |
| 100 | $18.75 | $1,875.00 |
| 500 | $17 | $8,500.00 |
| 1,000 | $15.5 | $15,500.00 |
MT41K256M16TW-093 نظرة عامة
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that transfers data on both edges of the clock, achieving high bandwidth. It is a low-voltage variant of DDR3, operating at 1.35V instead of 1.5V, reducing power consumption by about 15% while maintaining similar performance. DDR3L is part of the DDR SDRAM family, which includes DDR, DDR2, DDR3, and DDR4, each generation offering higher speed and lower power. In a system hierarchy, DDR3L SDRAM sits between the memory controller (often integrated in the CPU or SoC) and the system bus, providing temporary data storage for active processes.
Key features include a 4Gbit density, 16-bit data bus width, 1.35V core voltage, and support for auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (DTC), ZQ calibration, and write leveling. These features enhance signal integrity and power efficiency, making it suitable for high-performance computing and mobile applications. The device also supports a temperature range of 0°C to +95°C (TC) for standard operation, with an industrial temperature variant available.
Technically, the MT41K256M16TW-093 uses a 30nm-class process technology, enabling high density and low power. It incorporates on-die termination (ODT) to improve signal quality on the memory bus, and its ZQ calibration feature allows precise impedance matching. The device is designed for reliable operation in demanding environments, with a mean time between failures (MTBF) that meets industry standards.
Typical applications include servers, networking equipment, industrial computing, and embedded systems where high memory bandwidth and low power are critical. Its 1.35V operation makes it ideal for power-sensitive designs, such as laptops and portable devices, while its high speed supports data-intensive tasks like real-time analytics and virtualization.
When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise, and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 2133 MT/s. The device requires a stable 1.35V supply and careful termination of the address/control bus.
بدائل مباشرة لـ MT41K256M16TW-093 — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع MT41K256M16TW-093 (نفس عامل الشكل والبصمة) — يختلف في Data Bus Width, Data Rate, Package, Supply Voltage.
أداة المقارنة السريعة — اختر قطعًا بديلة للمقارنة جنبًا إلى جنب:
MT41K256M16TW-093:P
تواصل لمعرفة السعر
عرض ورقة البيانات ←MT41K256M16TW-107:P
تواصل لمعرفة السعر
عرض ورقة البيانات ←K4B4G1646E-BYMA
✗ غير متوفر
$14.3182 / وحدة
عرض ورقة البيانات ←MT41K256M16TW-093 IT:P
📋 بديل مرجعي (غير موجود في الكتالوج)
H5AN8G6NAFR-TFC
📋 بديل مرجعي (غير موجود في الكتالوج)
MT41K256M16TW-093 الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR3L SDRAM |
| حجم الذاكرة | 4Gbit (256M x 16) |
| عرض ناقل البيانات | 16 bit |
| Clock Frequency | 1.066 GHz |
| معدل البيانات | 2133 MT/s |
| Access Time | 20 ns |
| جهد التغذية | 1.35 V (1.283 V to 1.45 V) |
| نوع الواجهة | Parallel |
| العلبة | 96-FBGA (8x14 mm) |
| نوع التركيب | Surface Mount |
| نطاق درجة حرارة التشغيل | 0°C to +95°C (TC) |
| حالة RoHS | Compliant |
| REACH Status | Compliant |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
تكوين أطراف MT41K256M16TW-093
| دبوس A1 | VDD — Power supply (1.35V) |
| دبوس A2 | DQ0 — Data input/output 0 |
| دبوس A3 | DQ1 — Data input/output 1 |
| دبوس A4 | VSS — Ground |
| دبوس A5 | DQ2 — Data input/output 2 |
| دبوس A6 | DQ3 — Data input/output 3 |
| دبوس A7 | VDDQ — I/O power supply |
| دبوس A8 | DQ4 — Data input/output 4 |
| دبوس A9 | DQ5 — Data input/output 5 |
| دبوس A10 | VSS — Ground |
| دبوس A11 | DQ6 — Data input/output 6 |
| دبوس A12 | DQ7 — Data input/output 7 |
| دبوس B1 | VSS — Ground |
| دبوس B2 | DQ8 — Data input/output 8 |
| دبوس B3 | DQ9 — Data input/output 9 |
| دبوس B4 | VDD — Power supply |
| دبوس B5 | DQ10 — Data input/output 10 |
| دبوس B6 | DQ11 — Data input/output 11 |
| دبوس B7 | VSS — Ground |
| دبوس B8 | DQ12 — Data input/output 12 |
| دبوس B9 | DQ13 — Data input/output 13 |
| دبوس B10 | VDDQ — I/O power supply |
| دبوس B11 | DQ14 — Data input/output 14 |
| دبوس B12 | DQ15 — Data input/output 15 |
| دبوس C1 | VDD — Power supply |
| دبوس C2 | A0 — Address input 0 |
| دبوس C3 | A1 — Address input 1 |
| دبوس C4 | A2 — Address input 2 |
| دبوس C5 | A3 — Address input 3 |
| دبوس C6 | A4 — Address input 4 |
| دبوس C7 | A5 — Address input 5 |
| دبوس C8 | A6 — Address input 6 |
| دبوس C9 | A7 — Address input 7 |
| دبوس C10 | A8 — Address input 8 |
| دبوس C11 | A9 — Address input 9 |
| دبوس C12 | VSS — Ground |
| دبوس D1 | VSS — Ground |
| دبوس D2 | A10/AP — Address input 10 / Auto-precharge |
| دبوس D3 | A11 — Address input 11 |
| دبوس D4 | A12/BC — Address input 12 / Burst chop |
| دبوس D5 | A13 — Address input 13 |
| دبوس D6 | A14 — Address input 14 |
| دبوس D7 | A15 — Address input 15 |
| دبوس D8 | BA0 — Bank address 0 |
| دبوس D9 | BA1 — Bank address 1 |
| دبوس D10 | BA2 — Bank address 2 |
| دبوس D11 | RAS# — Row address strobe |
| دبوس D12 | VDD — Power supply |
| دبوس E1 | VDD — Power supply |
| دبوس E2 | CAS# — Column address strobe |
| دبوس E3 | WE# — Write enable |
| دبوس E4 | CS# — Chip select |
| دبوس E5 | CKE — Clock enable |
| دبوس E6 | ODT — On-die termination |
| دبوس E7 | CK — Clock (positive) |
| دبوس E8 | CK# — Clock (negative) |
| دبوس E9 | RESET# — Reset |
| دبوس E10 | DM0 — Data mask 0 |
| دبوس E11 | DM1 — Data mask 1 |
| دبوس E12 | VSS — Ground |
| دبوس F1 | VSS — Ground |
| دبوس F2 | TDQS0 — Termination data strobe 0 |
| دبوس F3 | TDQS1 — Termination data strobe 1 |
| دبوس F4 | VDDQ — I/O power supply |
| دبوس F5 | VDD — Power supply |
| دبوس F6 | VSS — Ground |
| دبوس F7 | VDDQ — I/O power supply |
| دبوس F8 | VDD — Power supply |
| دبوس F9 | VSS — Ground |
| دبوس F10 | VDDQ — I/O power supply |
| دبوس F11 | VDD — Power supply |
| دبوس F12 | VSS — Ground |
التطبيقات النموذجية
MT41K256M16TW-093 مناسب لـ 6 التطبيقs: Server Memory, Networking Equipment, Industrial Computing, Mobile and Portable Devices, Automotive Infotainment, Test and Measurement.
Server Memory
The MT41K256M16TW-093 provides high-density, low-power memory for server applications. Its 4Gbit capacity and 2133 MT/s data rate support demanding workloads such as virtualization and cloud computing. The 1.35V operation reduces power consumption in data centers, contributing to lower operating costs. When used in registered DIMMs, it enables reliable operation in multi-channel configurations, ensuring high throughput for enterprise applications.
موصى به
Networking Equipment
In networking equipment like routers and switches, the MT41K256M16TW-093 offers the speed and capacity needed for packet buffering and forwarding tables. Its 2133 MT/s data rate ensures low latency, while the 1.35V supply helps manage thermal budgets in compact enclosures. The device's on-die termination and ZQ calibration improve signal integrity on high-speed buses, making it suitable for 10GbE and 40GbE line cards.
موصى به
Industrial Computing
For industrial PCs and embedded systems, the MT41K256M16TW-093 provides reliable memory in harsh environments. Its operating temperature range of 0°C to +95°C (TC) covers most industrial settings, and the industrial temperature variant extends this to -40°C. The low-voltage operation reduces heat generation, which is critical in sealed enclosures. The device's robust design ensures long-term reliability in factory automation and process control.
موصى به
Mobile and Portable Devices
The MT41K256M16TW-093's 1.35V operation makes it ideal for battery-powered devices, reducing power consumption by up to 15% compared to standard DDR3. Its 4Gbit density supports multitasking and multimedia applications in smartphones, tablets, and ultrabooks. The small 96-FBGA package saves board space, and the auto self-refresh feature minimizes standby power, extending battery life.
موصى به
Automotive Infotainment
In automotive infotainment systems, the MT41K256M16TW-093 provides the memory bandwidth for navigation, audio, and video playback. Its high data rate ensures smooth graphics rendering, while the low-voltage operation helps manage the thermal environment inside the vehicle. The device's reliability and long lifecycle support automotive-grade requirements, and the industrial temperature variant can handle extreme temperatures. It is suitable for head units and telematics systems.
موصى به
Test and Measurement
The MT41K256M16TW-093 is used in test and measurement equipment such as oscilloscopes and logic analyzers, where high-speed data acquisition requires fast memory. Its 2133 MT/s data rate enables real-time signal processing, and the 4Gbit capacity allows for long capture buffers. The device's low power consumption is beneficial in portable instruments, and its precise timing characteristics ensure accurate data capture.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ MT41K256M16TW-093 — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | MT41K256M16TW-093 | MT41K256M16TW-093 IT | MT41K256M16TW-107 | K4B4G1646E-BYMA | H5AN8G6NAFR-TFC |
|---|---|---|---|---|---|---|
| Package | 96-FBGA (8x14 mm) | P: 96-FBGA (8x14 mm) | P: 96-FBGA (8x14 mm) | P: 96-FBGA (8x14 mm) | 96-FBGA (8x14 mm) | 96-FBGA (8x14 mm) |
| Brand | Micron Technology | P: Micron Technology | P: Micron Technology | P: Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 4Gbit | P: 4Gbit | P: 4Gbit | P: 4Gbit | 4Gbit | 4Gbit |
| Data Rate | 2133 MT/s | P: 2133 MT/s | P: 2133 MT/s | P: 1866 MT/s | 2133 MT/s | 2133 MT/s |
| Supply Voltage | 1.35V | P: 1.35V | P: 1.35V | P: 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +95°C | P: 0°C to +95°C | P: -40°C to +95°C | P: 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | P: Compliant | P: Compliant | P: Compliant | Compliant | Compliant |
أبرز الفروقات
- Higher speed grade than -107 variant (مقابلMT41K256M16TW-107:P)
- Industrial temperature option (مقابلK4B4G1646E-BYMA)
- Low-voltage operation (مقابلH5AN8G6NAFR-TFC)
ملاحظات التصميم
For reliable operation at 2133 MT/s, maintain controlled impedance of 50 ohms for data lines and 40 ohms for address/command lines. Keep trace lengths matched within +/- 0.5 mm to minimize skew. Use a solid ground plane beneath the memory device and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The MT41K256M16TW-093 dissipates up to 1.5W under full load. Ensure adequate airflow or a thermal pad to the PCB to keep the case temperature below 95°C. For industrial temperature variants, the maximum case temperature is 95°C, but ambient may be higher; consider heatsinking if the device is in a confined space.
Use on-die termination (ODT) settings as recommended in the datasheet to match the motherboard's impedance. Enable ZQ calibration during initialization to compensate for process variations. For high-speed signals, route data lines on inner layers with ground shielding to reduce crosstalk and EMI.
معلومات الامتثال
RoHS and REACH compliant per distributor listings. Not AEC-Q100 qualified as it is a memory component.
