MT41K256M16TW-093 - 4Gbit DDR3L SDRAM 1.066GHz | Micron
N.º da peça: MT41K256M16TW-093 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $22.23 | $22,23 |
| 10 | $20.5 | $205,00 |
| 100 | $18.75 | $1.875,00 |
| 500 | $17 | $8.500,00 |
| 1.000 | $15.5 | $15.500,00 |
MT41K256M16TW-093 Visão geral
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that transfers data on both edges of the clock, achieving high bandwidth. It is a low-voltage variant of DDR3, operating at 1.35V instead of 1.5V, reducing power consumption by about 15% while maintaining similar performance. DDR3L is part of the DDR SDRAM family, which includes DDR, DDR2, DDR3, and DDR4, each generation offering higher speed and lower power. In a system hierarchy, DDR3L SDRAM sits between the memory controller (often integrated in the CPU or SoC) and the system bus, providing temporary data storage for active processes.
Key features include a 4Gbit density, 16-bit data bus width, 1.35V core voltage, and support for auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (DTC), ZQ calibration, and write leveling. These features enhance signal integrity and power efficiency, making it suitable for high-performance computing and mobile applications. The device also supports a temperature range of 0°C to +95°C (TC) for standard operation, with an industrial temperature variant available.
Technically, the MT41K256M16TW-093 uses a 30nm-class process technology, enabling high density and low power. It incorporates on-die termination (ODT) to improve signal quality on the memory bus, and its ZQ calibration feature allows precise impedance matching. The device is designed for reliable operation in demanding environments, with a mean time between failures (MTBF) that meets industry standards.
Typical applications include servers, networking equipment, industrial computing, and embedded systems where high memory bandwidth and low power are critical. Its 1.35V operation makes it ideal for power-sensitive designs, such as laptops and portable devices, while its high speed supports data-intensive tasks like real-time analytics and virtualization.
When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise, and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 2133 MT/s. The device requires a stable 1.35V supply and careful termination of the address/control bus.
Alternativas drop-in para MT41K256M16TW-093 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com MT41K256M16TW-093 (mesmo formato e footprint) — diferindo em Data Bus Width, Data Rate, Package, Supply Voltage.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MT41K256M16TW-093:P
✓ Em estoque
$15.5 / unidade
Ver ficha técnica →MT41K256M16TW-107:P
✓ Em estoque
$16 / unidade
Ver ficha técnica →K4B4G1646E-BYMA
✓ Em estoque
$14.3182 / unidade
Ver ficha técnica →MT41K256M16TW-093 IT:P
📋 Alternativa de referência (fora do catálogo)
H5AN8G6NAFR-TFC
📋 Alternativa de referência (fora do catálogo)
MT41K256M16TW-093 Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Tamanho da memória | 4Gbit (256M x 16) |
| Largura do barramento de dados | 16 bit |
| Clock Frequency | 1.066 GHz |
| Taxa de dados | 2133 MT/s |
| Access Time | 20 ns |
| Tensão de alimentação | 1.35 V (1.283 V to 1.45 V) |
| Tipo de interface | Parallel |
| Encapsulamento | 96-FBGA (8x14 mm) |
| Tipo de montagem | Surface Mount |
| Faixa de temperatura de operação | 0°C to +95°C (TC) |
| Status RoHS | Compliant |
| REACH Status | Compliant |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
Configuração de pinos do MT41K256M16TW-093
| Pino A1 | VDD — Power supply (1.35V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDDQ — I/O power supply |
| Pino A8 | DQ4 — Data input/output 4 |
| Pino A9 | DQ5 — Data input/output 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data input/output 6 |
| Pino A12 | DQ7 — Data input/output 7 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ8 — Data input/output 8 |
| Pino B3 | DQ9 — Data input/output 9 |
| Pino B4 | VDD — Power supply |
| Pino B5 | DQ10 — Data input/output 10 |
| Pino B6 | DQ11 — Data input/output 11 |
| Pino B7 | VSS — Ground |
| Pino B8 | DQ12 — Data input/output 12 |
| Pino B9 | DQ13 — Data input/output 13 |
| Pino B10 | VDDQ — I/O power supply |
| Pino B11 | DQ14 — Data input/output 14 |
| Pino B12 | DQ15 — Data input/output 15 |
| Pino C1 | VDD — Power supply |
| Pino C2 | A0 — Address input 0 |
| Pino C3 | A1 — Address input 1 |
| Pino C4 | A2 — Address input 2 |
| Pino C5 | A3 — Address input 3 |
| Pino C6 | A4 — Address input 4 |
| Pino C7 | A5 — Address input 5 |
| Pino C8 | A6 — Address input 6 |
| Pino C9 | A7 — Address input 7 |
| Pino C10 | A8 — Address input 8 |
| Pino C11 | A9 — Address input 9 |
| Pino C12 | VSS — Ground |
| Pino D1 | VSS — Ground |
| Pino D2 | A10/AP — Address input 10 / Auto-precharge |
| Pino D3 | A11 — Address input 11 |
| Pino D4 | A12/BC — Address input 12 / Burst chop |
| Pino D5 | A13 — Address input 13 |
| Pino D6 | A14 — Address input 14 |
| Pino D7 | A15 — Address input 15 |
| Pino D8 | BA0 — Bank address 0 |
| Pino D9 | BA1 — Bank address 1 |
| Pino D10 | BA2 — Bank address 2 |
| Pino D11 | RAS# — Row address strobe |
| Pino D12 | VDD — Power supply |
| Pino E1 | VDD — Power supply |
| Pino E2 | CAS# — Column address strobe |
| Pino E3 | WE# — Write enable |
| Pino E4 | CS# — Chip select |
| Pino E5 | CKE — Clock enable |
| Pino E6 | ODT — On-die termination |
| Pino E7 | CK — Clock (positive) |
| Pino E8 | CK# — Clock (negative) |
| Pino E9 | RESET# — Reset |
| Pino E10 | DM0 — Data mask 0 |
| Pino E11 | DM1 — Data mask 1 |
| Pino E12 | VSS — Ground |
| Pino F1 | VSS — Ground |
| Pino F2 | TDQS0 — Termination data strobe 0 |
| Pino F3 | TDQS1 — Termination data strobe 1 |
| Pino F4 | VDDQ — I/O power supply |
| Pino F5 | VDD — Power supply |
| Pino F6 | VSS — Ground |
| Pino F7 | VDDQ — I/O power supply |
| Pino F8 | VDD — Power supply |
| Pino F9 | VSS — Ground |
| Pino F10 | VDDQ — I/O power supply |
| Pino F11 | VDD — Power supply |
| Pino F12 | VSS — Ground |
Aplicações típicas
MT41K256M16TW-093 é adequado para 6 aplicaçãos: Server Memory, Networking Equipment, Industrial Computing, Mobile and Portable Devices, Automotive Infotainment, Test and Measurement.
Server Memory
The MT41K256M16TW-093 provides high-density, low-power memory for server applications. Its 4Gbit capacity and 2133 MT/s data rate support demanding workloads such as virtualization and cloud computing. The 1.35V operation reduces power consumption in data centers, contributing to lower operating costs. When used in registered DIMMs, it enables reliable operation in multi-channel configurations, ensuring high throughput for enterprise applications.
Recomendado
Networking Equipment
In networking equipment like routers and switches, the MT41K256M16TW-093 offers the speed and capacity needed for packet buffering and forwarding tables. Its 2133 MT/s data rate ensures low latency, while the 1.35V supply helps manage thermal budgets in compact enclosures. The device's on-die termination and ZQ calibration improve signal integrity on high-speed buses, making it suitable for 10GbE and 40GbE line cards.
Recomendado
Industrial Computing
For industrial PCs and embedded systems, the MT41K256M16TW-093 provides reliable memory in harsh environments. Its operating temperature range of 0°C to +95°C (TC) covers most industrial settings, and the industrial temperature variant extends this to -40°C. The low-voltage operation reduces heat generation, which is critical in sealed enclosures. The device's robust design ensures long-term reliability in factory automation and process control.
Recomendado
Mobile and Portable Devices
The MT41K256M16TW-093's 1.35V operation makes it ideal for battery-powered devices, reducing power consumption by up to 15% compared to standard DDR3. Its 4Gbit density supports multitasking and multimedia applications in smartphones, tablets, and ultrabooks. The small 96-FBGA package saves board space, and the auto self-refresh feature minimizes standby power, extending battery life.
Recomendado
Automotive Infotainment
In automotive infotainment systems, the MT41K256M16TW-093 provides the memory bandwidth for navigation, audio, and video playback. Its high data rate ensures smooth graphics rendering, while the low-voltage operation helps manage the thermal environment inside the vehicle. The device's reliability and long lifecycle support automotive-grade requirements, and the industrial temperature variant can handle extreme temperatures. It is suitable for head units and telematics systems.
Recomendado
Test and Measurement
The MT41K256M16TW-093 is used in test and measurement equipment such as oscilloscopes and logic analyzers, where high-speed data acquisition requires fast memory. Its 2133 MT/s data rate enables real-time signal processing, and the 4Gbit capacity allows for long capture buffers. The device's low power consumption is beneficial in portable instruments, and its precise timing characteristics ensure accurate data capture.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MT41K256M16TW-093 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MT41K256M16TW-093 | MT41K256M16TW-093 IT | MT41K256M16TW-107 | K4B4G1646E-BYMA | H5AN8G6NAFR-TFC |
|---|---|---|---|---|---|---|
| Package | 96-FBGA (8x14 mm) | P: 96-FBGA (8x14 mm) | P: 96-FBGA (8x14 mm) | P: 96-FBGA (8x14 mm) | 96-FBGA (8x14 mm) | 96-FBGA (8x14 mm) |
| Brand | Micron Technology | P: Micron Technology | P: Micron Technology | P: Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 4Gbit | P: 4Gbit | P: 4Gbit | P: 4Gbit | 4Gbit | 4Gbit |
| Data Rate | 2133 MT/s | P: 2133 MT/s | P: 2133 MT/s | P: 1866 MT/s | 2133 MT/s | 2133 MT/s |
| Supply Voltage | 1.35V | P: 1.35V | P: 1.35V | P: 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +95°C | P: 0°C to +95°C | P: -40°C to +95°C | P: 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | P: Compliant | P: Compliant | P: Compliant | Compliant | Compliant |
Principais diferenciais
- Higher speed grade than -107 variant (vs MT41K256M16TW-107:P)
- Industrial temperature option (vs K4B4G1646E-BYMA)
- Low-voltage operation (vs H5AN8G6NAFR-TFC)
Notas de projeto
For reliable operation at 2133 MT/s, maintain controlled impedance of 50 ohms for data lines and 40 ohms for address/command lines. Keep trace lengths matched within +/- 0.5 mm to minimize skew. Use a solid ground plane beneath the memory device and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The MT41K256M16TW-093 dissipates up to 1.5W under full load. Ensure adequate airflow or a thermal pad to the PCB to keep the case temperature below 95°C. For industrial temperature variants, the maximum case temperature is 95°C, but ambient may be higher; consider heatsinking if the device is in a confined space.
Use on-die termination (ODT) settings as recommended in the datasheet to match the motherboard's impedance. Enable ZQ calibration during initialization to compensate for process variations. For high-speed signals, route data lines on inner layers with ground shielding to reduce crosstalk and EMI.
Informações de conformidade
RoHS and REACH compliant per distributor listings. Not AEC-Q100 qualified as it is a memory component.
