MT41K256M16TW-093 - 4Gbit DDR3L SDRAM 1.066GHz | Micron
MPN: MT41K256M16TW-093 ✓ Hoạt động| Số lượng | Giá đơn vị | Phụ |
|---|---|---|
| 1 | $22.23 | $22,23 |
| 10 | $20.5 | $205,00 |
| 100 | $18.75 | $1.875,00 |
| 500 | $17 | $8.500,00 |
| 1.000 | $15.5 | $15.500,00 |
MT41K256M16TW-093 Tóm tắt
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that transfers data on both edges of the clock, achieving high bandwidth. It is a low-voltage variant of DDR3, operating at 1.35V instead of 1.5V, reducing power consumption by about 15% while maintaining similar performance. DDR3L is part of the DDR SDRAM family, which includes DDR, DDR2, DDR3, and DDR4, each generation offering higher speed and lower power. In a system hierarchy, DDR3L SDRAM sits between the memory controller (often integrated in the CPU or SoC) and the system bus, providing temporary data storage for active processes.
Key features include a 4Gbit density, 16-bit data bus width, 1.35V core voltage, and support for auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (DTC), ZQ calibration, and write leveling. These features enhance signal integrity and power efficiency, making it suitable for high-performance computing and mobile applications. The device also supports a temperature range of 0°C to +95°C (TC) for standard operation, with an industrial temperature variant available.
Technically, the MT41K256M16TW-093 uses a 30nm-class process technology, enabling high density and low power. It incorporates on-die termination (ODT) to improve signal quality on the memory bus, and its ZQ calibration feature allows precise impedance matching. The device is designed for reliable operation in demanding environments, with a mean time between failures (MTBF) that meets industry standards.
Typical applications include servers, networking equipment, industrial computing, and embedded systems where high memory bandwidth and low power are critical. Its 1.35V operation makes it ideal for power-sensitive designs, such as laptops and portable devices, while its high speed supports data-intensive tasks like real-time analytics and virtualization.
When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise, and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 2133 MT/s. The device requires a stable 1.35V supply and careful termination of the address/control bus.
Bộ thay thế dễ dàng lắp đặt cho MT41K256M16TW-093 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với MT41K256M16TW-093 (cùng hình factor và footprint) — khác nhau ở Data Bus Width, Data Rate, Package, Supply Voltage.
Công cụ so sánh nhanh — Chọn các bộ phận thay thế để so sánh song song:
MT41K256M16TW-093:P
Liên hệ để biết giá
Xem tài liệu →MT41K256M16TW-107:P
Liên hệ để biết giá
Xem tài liệu →K4B4G1646E-BYMA
✗ Hết hàng
$14.3182 / Đơn vị
Xem tài liệu →MT41K256M16TW-093 IT:P
📋 Tham chiếu thay thế (không có trong danh mục)
H5AN8G6NAFR-TFC
📋 Tham chiếu thay thế (không có trong danh mục)
MT41K256M16TW-093 Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR3L SDRAM |
| Kích thước bộ nhớ | 4Gbit (256M x 16) |
| Bề rộng đường dữ liệu | 16 bit |
| Clock Frequency | 1.066 GHz |
| Tốc độ dữ liệu | 2133 MT/s |
| Access Time | 20 ns |
| Điện áp cung cấp | 1.35 V (1.283 V to 1.45 V) |
| Loại giao diện | Parallel |
| Hộp | 96-FBGA (8x14 mm) |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | 0°C to +95°C (TC) |
| Trạng thái RoHS | Compliant |
| REACH Status | Compliant |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
Cấu hình chân MT41K256M16TW-093
| Chân A1 | VDD — Power supply (1.35V) |
| Chân A2 | DQ0 — Data input/output 0 |
| Chân A3 | DQ1 — Data input/output 1 |
| Chân A4 | VSS — Ground |
| Chân A5 | DQ2 — Data input/output 2 |
| Chân A6 | DQ3 — Data input/output 3 |
| Chân A7 | VDDQ — I/O power supply |
| Chân A8 | DQ4 — Data input/output 4 |
| Chân A9 | DQ5 — Data input/output 5 |
| Chân A10 | VSS — Ground |
| Chân A11 | DQ6 — Data input/output 6 |
| Chân A12 | DQ7 — Data input/output 7 |
| Chân B1 | VSS — Ground |
| Chân B2 | DQ8 — Data input/output 8 |
| Chân B3 | DQ9 — Data input/output 9 |
| Chân B4 | VDD — Power supply |
| Chân B5 | DQ10 — Data input/output 10 |
| Chân B6 | DQ11 — Data input/output 11 |
| Chân B7 | VSS — Ground |
| Chân B8 | DQ12 — Data input/output 12 |
| Chân B9 | DQ13 — Data input/output 13 |
| Chân B10 | VDDQ — I/O power supply |
| Chân B11 | DQ14 — Data input/output 14 |
| Chân B12 | DQ15 — Data input/output 15 |
| Chân C1 | VDD — Power supply |
| Chân C2 | A0 — Address input 0 |
| Chân C3 | A1 — Address input 1 |
| Chân C4 | A2 — Address input 2 |
| Chân C5 | A3 — Address input 3 |
| Chân C6 | A4 — Address input 4 |
| Chân C7 | A5 — Address input 5 |
| Chân C8 | A6 — Address input 6 |
| Chân C9 | A7 — Address input 7 |
| Chân C10 | A8 — Address input 8 |
| Chân C11 | A9 — Address input 9 |
| Chân C12 | VSS — Ground |
| Chân D1 | VSS — Ground |
| Chân D2 | A10/AP — Address input 10 / Auto-precharge |
| Chân D3 | A11 — Address input 11 |
| Chân D4 | A12/BC — Address input 12 / Burst chop |
| Chân D5 | A13 — Address input 13 |
| Chân D6 | A14 — Address input 14 |
| Chân D7 | A15 — Address input 15 |
| Chân D8 | BA0 — Bank address 0 |
| Chân D9 | BA1 — Bank address 1 |
| Chân D10 | BA2 — Bank address 2 |
| Chân D11 | RAS# — Row address strobe |
| Chân D12 | VDD — Power supply |
| Chân E1 | VDD — Power supply |
| Chân E2 | CAS# — Column address strobe |
| Chân E3 | WE# — Write enable |
| Chân E4 | CS# — Chip select |
| Chân E5 | CKE — Clock enable |
| Chân E6 | ODT — On-die termination |
| Chân E7 | CK — Clock (positive) |
| Chân E8 | CK# — Clock (negative) |
| Chân E9 | RESET# — Reset |
| Chân E10 | DM0 — Data mask 0 |
| Chân E11 | DM1 — Data mask 1 |
| Chân E12 | VSS — Ground |
| Chân F1 | VSS — Ground |
| Chân F2 | TDQS0 — Termination data strobe 0 |
| Chân F3 | TDQS1 — Termination data strobe 1 |
| Chân F4 | VDDQ — I/O power supply |
| Chân F5 | VDD — Power supply |
| Chân F6 | VSS — Ground |
| Chân F7 | VDDQ — I/O power supply |
| Chân F8 | VDD — Power supply |
| Chân F9 | VSS — Ground |
| Chân F10 | VDDQ — I/O power supply |
| Chân F11 | VDD — Power supply |
| Chân F12 | VSS — Ground |
Ứng dụng tiêu biểu
MT41K256M16TW-093 phù hợp cho 6 Áp dụngs: Server Memory, Networking Equipment, Industrial Computing, Mobile and Portable Devices, Automotive Infotainment, Test and Measurement.
Server Memory
The MT41K256M16TW-093 provides high-density, low-power memory for server applications. Its 4Gbit capacity and 2133 MT/s data rate support demanding workloads such as virtualization and cloud computing. The 1.35V operation reduces power consumption in data centers, contributing to lower operating costs. When used in registered DIMMs, it enables reliable operation in multi-channel configurations, ensuring high throughput for enterprise applications.
Được đề xuất
Networking Equipment
In networking equipment like routers and switches, the MT41K256M16TW-093 offers the speed and capacity needed for packet buffering and forwarding tables. Its 2133 MT/s data rate ensures low latency, while the 1.35V supply helps manage thermal budgets in compact enclosures. The device's on-die termination and ZQ calibration improve signal integrity on high-speed buses, making it suitable for 10GbE and 40GbE line cards.
Được đề xuất
Industrial Computing
For industrial PCs and embedded systems, the MT41K256M16TW-093 provides reliable memory in harsh environments. Its operating temperature range of 0°C to +95°C (TC) covers most industrial settings, and the industrial temperature variant extends this to -40°C. The low-voltage operation reduces heat generation, which is critical in sealed enclosures. The device's robust design ensures long-term reliability in factory automation and process control.
Được đề xuất
Mobile and Portable Devices
The MT41K256M16TW-093's 1.35V operation makes it ideal for battery-powered devices, reducing power consumption by up to 15% compared to standard DDR3. Its 4Gbit density supports multitasking and multimedia applications in smartphones, tablets, and ultrabooks. The small 96-FBGA package saves board space, and the auto self-refresh feature minimizes standby power, extending battery life.
Được đề xuất
Automotive Infotainment
In automotive infotainment systems, the MT41K256M16TW-093 provides the memory bandwidth for navigation, audio, and video playback. Its high data rate ensures smooth graphics rendering, while the low-voltage operation helps manage the thermal environment inside the vehicle. The device's reliability and long lifecycle support automotive-grade requirements, and the industrial temperature variant can handle extreme temperatures. It is suitable for head units and telematics systems.
Được đề xuất
Test and Measurement
The MT41K256M16TW-093 is used in test and measurement equipment such as oscilloscopes and logic analyzers, where high-speed data acquisition requires fast memory. Its 2133 MT/s data rate enables real-time signal processing, and the 4Gbit capacity allows for long capture buffers. The device's low power consumption is beneficial in portable instruments, and its precise timing characteristics ensure accurate data capture.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MT41K256M16TW-093 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MT41K256M16TW-093 | MT41K256M16TW-093 IT | MT41K256M16TW-107 | K4B4G1646E-BYMA | H5AN8G6NAFR-TFC |
|---|---|---|---|---|---|---|
| Package | 96-FBGA (8x14 mm) | P: 96-FBGA (8x14 mm) | P: 96-FBGA (8x14 mm) | P: 96-FBGA (8x14 mm) | 96-FBGA (8x14 mm) | 96-FBGA (8x14 mm) |
| Brand | Micron Technology | P: Micron Technology | P: Micron Technology | P: Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 4Gbit | P: 4Gbit | P: 4Gbit | P: 4Gbit | 4Gbit | 4Gbit |
| Data Rate | 2133 MT/s | P: 2133 MT/s | P: 2133 MT/s | P: 1866 MT/s | 2133 MT/s | 2133 MT/s |
| Supply Voltage | 1.35V | P: 1.35V | P: 1.35V | P: 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +95°C | P: 0°C to +95°C | P: -40°C to +95°C | P: 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | P: Compliant | P: Compliant | P: Compliant | Compliant | Compliant |
Bảo phân biệt quan trọng
- Higher speed grade than -107 variant (vsMT41K256M16TW-107:P)
- Industrial temperature option (vsK4B4G1646E-BYMA)
- Low-voltage operation (vsH5AN8G6NAFR-TFC)
Ghi chú thiết kế
For reliable operation at 2133 MT/s, maintain controlled impedance of 50 ohms for data lines and 40 ohms for address/command lines. Keep trace lengths matched within +/- 0.5 mm to minimize skew. Use a solid ground plane beneath the memory device and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The MT41K256M16TW-093 dissipates up to 1.5W under full load. Ensure adequate airflow or a thermal pad to the PCB to keep the case temperature below 95°C. For industrial temperature variants, the maximum case temperature is 95°C, but ambient may be higher; consider heatsinking if the device is in a confined space.
Use on-die termination (ODT) settings as recommended in the datasheet to match the motherboard's impedance. Enable ZQ calibration during initialization to compensate for process variations. For high-speed signals, route data lines on inner layers with ground shielding to reduce crosstalk and EMI.
Thông tin tuân thủ
RoHS and REACH compliant per distributor listings. Not AEC-Q100 qualified as it is a memory component.
