MT41K256M16TW-093 - 4Gbit DDR3L SDRAM 1.066GHz | Micron
Référence : MT41K256M16TW-093 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $22.23 | $22,23 |
| 10 | $20.5 | $205,00 |
| 100 | $18.75 | $1 875,00 |
| 500 | $17 | $8 500,00 |
| 1 000 | $15.5 | $15 500,00 |
MT41K256M16TW-093 Présentation
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that transfers data on both edges of the clock, achieving high bandwidth. It is a low-voltage variant of DDR3, operating at 1.35V instead of 1.5V, reducing power consumption by about 15% while maintaining similar performance. DDR3L is part of the DDR SDRAM family, which includes DDR, DDR2, DDR3, and DDR4, each generation offering higher speed and lower power. In a system hierarchy, DDR3L SDRAM sits between the memory controller (often integrated in the CPU or SoC) and the system bus, providing temporary data storage for active processes.
Key features include a 4Gbit density, 16-bit data bus width, 1.35V core voltage, and support for auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (DTC), ZQ calibration, and write leveling. These features enhance signal integrity and power efficiency, making it suitable for high-performance computing and mobile applications. The device also supports a temperature range of 0°C to +95°C (TC) for standard operation, with an industrial temperature variant available.
Technically, the MT41K256M16TW-093 uses a 30nm-class process technology, enabling high density and low power. It incorporates on-die termination (ODT) to improve signal quality on the memory bus, and its ZQ calibration feature allows precise impedance matching. The device is designed for reliable operation in demanding environments, with a mean time between failures (MTBF) that meets industry standards.
Typical applications include servers, networking equipment, industrial computing, and embedded systems where high memory bandwidth and low power are critical. Its 1.35V operation makes it ideal for power-sensitive designs, such as laptops and portable devices, while its high speed supports data-intensive tasks like real-time analytics and virtualization.
When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise, and follow the PCB layout guidelines in the datasheet to maintain signal integrity at 2133 MT/s. The device requires a stable 1.35V supply and careful termination of the address/control bus.
Alternatives de remplacement direct pour MT41K256M16TW-093 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec MT41K256M16TW-093 (même facteur de forme et même empreinte) — différant par Data Bus Width, Data Rate, Package, Supply Voltage.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
MT41K256M16TW-093:P
✓ En stock
$15.5 / unité
Voir la fiche technique →MT41K256M16TW-107:P
✓ En stock
$16 / unité
Voir la fiche technique →K4B4G1646E-BYMA
✓ En stock
$14.3182 / unité
Voir la fiche technique →MT41K256M16TW-093 IT:P
📋 Alternative de référence (hors catalogue)
H5AN8G6NAFR-TFC
📋 Alternative de référence (hors catalogue)
MT41K256M16TW-093 Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Taille de mémoire | 4Gbit (256M x 16) |
| Largeur du bus de données | 16 bit |
| Clock Frequency | 1.066 GHz |
| Débit de données | 2133 MT/s |
| Access Time | 20 ns |
| Tension d'alimentation | 1.35 V (1.283 V to 1.45 V) |
| Type d'interface | Parallel |
| Boîtier | 96-FBGA (8x14 mm) |
| Type de montage | Surface Mount |
| Plage de température de fonctionnement | 0°C to +95°C (TC) |
| Statut RoHS | Compliant |
| REACH Status | Compliant |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
Configuration des broches de MT41K256M16TW-093
| Broche A1 | VDD — Power supply (1.35V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDDQ — I/O power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VDD — Power supply |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VSS — Ground |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VDDQ — I/O power supply |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
| Broche C1 | VDD — Power supply |
| Broche C2 | A0 — Address input 0 |
| Broche C3 | A1 — Address input 1 |
| Broche C4 | A2 — Address input 2 |
| Broche C5 | A3 — Address input 3 |
| Broche C6 | A4 — Address input 4 |
| Broche C7 | A5 — Address input 5 |
| Broche C8 | A6 — Address input 6 |
| Broche C9 | A7 — Address input 7 |
| Broche C10 | A8 — Address input 8 |
| Broche C11 | A9 — Address input 9 |
| Broche C12 | VSS — Ground |
| Broche D1 | VSS — Ground |
| Broche D2 | A10/AP — Address input 10 / Auto-precharge |
| Broche D3 | A11 — Address input 11 |
| Broche D4 | A12/BC — Address input 12 / Burst chop |
| Broche D5 | A13 — Address input 13 |
| Broche D6 | A14 — Address input 14 |
| Broche D7 | A15 — Address input 15 |
| Broche D8 | BA0 — Bank address 0 |
| Broche D9 | BA1 — Bank address 1 |
| Broche D10 | BA2 — Bank address 2 |
| Broche D11 | RAS# — Row address strobe |
| Broche D12 | VDD — Power supply |
| Broche E1 | VDD — Power supply |
| Broche E2 | CAS# — Column address strobe |
| Broche E3 | WE# — Write enable |
| Broche E4 | CS# — Chip select |
| Broche E5 | CKE — Clock enable |
| Broche E6 | ODT — On-die termination |
| Broche E7 | CK — Clock (positive) |
| Broche E8 | CK# — Clock (negative) |
| Broche E9 | RESET# — Reset |
| Broche E10 | DM0 — Data mask 0 |
| Broche E11 | DM1 — Data mask 1 |
| Broche E12 | VSS — Ground |
| Broche F1 | VSS — Ground |
| Broche F2 | TDQS0 — Termination data strobe 0 |
| Broche F3 | TDQS1 — Termination data strobe 1 |
| Broche F4 | VDDQ — I/O power supply |
| Broche F5 | VDD — Power supply |
| Broche F6 | VSS — Ground |
| Broche F7 | VDDQ — I/O power supply |
| Broche F8 | VDD — Power supply |
| Broche F9 | VSS — Ground |
| Broche F10 | VDDQ — I/O power supply |
| Broche F11 | VDD — Power supply |
| Broche F12 | VSS — Ground |
Applications typiques
MT41K256M16TW-093 convient pour 6 applications: Server Memory, Networking Equipment, Industrial Computing, Mobile and Portable Devices, Automotive Infotainment, Test and Measurement.
Server Memory
The MT41K256M16TW-093 provides high-density, low-power memory for server applications. Its 4Gbit capacity and 2133 MT/s data rate support demanding workloads such as virtualization and cloud computing. The 1.35V operation reduces power consumption in data centers, contributing to lower operating costs. When used in registered DIMMs, it enables reliable operation in multi-channel configurations, ensuring high throughput for enterprise applications.
Recommandé
Networking Equipment
In networking equipment like routers and switches, the MT41K256M16TW-093 offers the speed and capacity needed for packet buffering and forwarding tables. Its 2133 MT/s data rate ensures low latency, while the 1.35V supply helps manage thermal budgets in compact enclosures. The device's on-die termination and ZQ calibration improve signal integrity on high-speed buses, making it suitable for 10GbE and 40GbE line cards.
Recommandé
Industrial Computing
For industrial PCs and embedded systems, the MT41K256M16TW-093 provides reliable memory in harsh environments. Its operating temperature range of 0°C to +95°C (TC) covers most industrial settings, and the industrial temperature variant extends this to -40°C. The low-voltage operation reduces heat generation, which is critical in sealed enclosures. The device's robust design ensures long-term reliability in factory automation and process control.
Recommandé
Mobile and Portable Devices
The MT41K256M16TW-093's 1.35V operation makes it ideal for battery-powered devices, reducing power consumption by up to 15% compared to standard DDR3. Its 4Gbit density supports multitasking and multimedia applications in smartphones, tablets, and ultrabooks. The small 96-FBGA package saves board space, and the auto self-refresh feature minimizes standby power, extending battery life.
Recommandé
Automotive Infotainment
In automotive infotainment systems, the MT41K256M16TW-093 provides the memory bandwidth for navigation, audio, and video playback. Its high data rate ensures smooth graphics rendering, while the low-voltage operation helps manage the thermal environment inside the vehicle. The device's reliability and long lifecycle support automotive-grade requirements, and the industrial temperature variant can handle extreme temperatures. It is suitable for head units and telematics systems.
Recommandé
Test and Measurement
The MT41K256M16TW-093 is used in test and measurement equipment such as oscilloscopes and logic analyzers, where high-speed data acquisition requires fast memory. Its 2133 MT/s data rate enables real-time signal processing, and the 4Gbit capacity allows for long capture buffers. The device's low power consumption is beneficial in portable instruments, and its precise timing characteristics ensure accurate data capture.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour MT41K256M16TW-093 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | MT41K256M16TW-093 | MT41K256M16TW-093 IT | MT41K256M16TW-107 | K4B4G1646E-BYMA | H5AN8G6NAFR-TFC |
|---|---|---|---|---|---|---|
| Package | 96-FBGA (8x14 mm) | P: 96-FBGA (8x14 mm) | P: 96-FBGA (8x14 mm) | P: 96-FBGA (8x14 mm) | 96-FBGA (8x14 mm) | 96-FBGA (8x14 mm) |
| Brand | Micron Technology | P: Micron Technology | P: Micron Technology | P: Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 4Gbit | P: 4Gbit | P: 4Gbit | P: 4Gbit | 4Gbit | 4Gbit |
| Data Rate | 2133 MT/s | P: 2133 MT/s | P: 2133 MT/s | P: 1866 MT/s | 2133 MT/s | 2133 MT/s |
| Supply Voltage | 1.35V | P: 1.35V | P: 1.35V | P: 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +95°C | P: 0°C to +95°C | P: -40°C to +95°C | P: 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | P: Compliant | P: Compliant | P: Compliant | Compliant | Compliant |
Principaux différenciateurs
- Higher speed grade than -107 variant (vs MT41K256M16TW-107:P)
- Industrial temperature option (vs K4B4G1646E-BYMA)
- Low-voltage operation (vs H5AN8G6NAFR-TFC)
Notes de conception
For reliable operation at 2133 MT/s, maintain controlled impedance of 50 ohms for data lines and 40 ohms for address/command lines. Keep trace lengths matched within +/- 0.5 mm to minimize skew. Use a solid ground plane beneath the memory device and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The MT41K256M16TW-093 dissipates up to 1.5W under full load. Ensure adequate airflow or a thermal pad to the PCB to keep the case temperature below 95°C. For industrial temperature variants, the maximum case temperature is 95°C, but ambient may be higher; consider heatsinking if the device is in a confined space.
Use on-die termination (ODT) settings as recommended in the datasheet to match the motherboard's impedance. Enable ZQ calibration during initialization to compensate for process variations. For high-speed signals, route data lines on inner layers with ground shielding to reduce crosstalk and EMI.
Informations de conformité
RoHS and REACH compliant per distributor listings. Not AEC-Q100 qualified as it is a memory component.
