1ED3127MU12FXUMA1 vs 1ED3124MC12HXUMA1 Comparison
Detailed side-by-side comparison of 1ED3127MU12FXUMA1 by Infineon and 1ED3124MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 β ActiveSpecification Comparison
| Parameter | 1ED3127MU12FXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $1.45 |
| Function | Single-channel isolated gate driver | β |
| Number of Outputs | 1 | 1 |
| Output Configuration | High-side / Low-side, Inverting / Non-Inverting | β |
| Peak Output Current | 10 A (source/sink) | β |
| Continuous Output Current | 9 A | β |
| Supply Voltage (VCC2 secondary) | 12 V to 35 V | β |
| Supply Voltage (VCC1 primary) | 3 V to 5.5 V | β |
| Propagation Delay (typ.) | 15 ns | β |
| Delay Matching (typ.) | 30 ns | β |
| Galvanic Isolation | 3000 Vrms (coreless transformer) | β |
| Operating Temperature Range | -40C to +125C | β |
| Protection Features | Miller clamp, UVLO, DESAT short-circuit protection | β |
| Package | PG-DSO-8-72 (SOIC-8 wide-body) | PG-DSO-8 (DSO-8) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Drives | IGBT, MOSFET, SiC MOSFET | β |
| Channel Type | β | Single-channel |
| Configuration | β | High-side / Low-side (non-inverting) |
| Number of Drivers | β | 1 |
| Peak Source Current | β | 13.5 A |
| Peak Sink Current | β | 14 A |
| Isolation Technology | β | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | β | 5.7 kV |
| Transient Overvoltage | β | 8000 Vpk |
| Supply Voltage (VCC2) | β | 10.5 V to 35 V |
| Supply Current (Max) | β | 1.1 mA |
| Propagation Delay (Typ) | β | 90 ns |
| Rise Time | β | 15 ns |
| Fall Time | β | 30 ns |
| Operating Temperature | β | -40 C to +125 C |
| Protections | β | UVLO, Short-Circuit (DESAT) |
| Target Devices | β | IGBT, SiC MOSFET |