1ED3127MU12FXUMA1 vs 1ED3124MC12HXUMA1 对比

详细并排对比 1ED3127MU12FXUMA1 出自 Infineon 和 1ED3124MC12HXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1ED3127MU12FXUMA1 1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon

1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon

1ED3127MU12FXUMA1 ✓ 量产中
Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 量产中

规格对比

参数 1ED3127MU12FXUMA1 1ED3124MC12HXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.74 $1.45
功能 Single-channel isolated gate driver —
输出数量 1 1
输出配置 High-side / Low-side, Inverting / Non-Inverting —
Peak Output Current 10 A (source/sink) —
Continuous Output Current 9 A —
Supply Voltage (VCC2 secondary) 12 V to 35 V —
Supply Voltage (VCC1 primary) 3 V to 5.5 V —
Propagation Delay (typ.) 15 ns —
Delay Matching (typ.) 30 ns —
Galvanic Isolation 3000 Vrms (coreless transformer) —
工作温度范围 -40C to +125C —
Protection Features Miller clamp, UVLO, DESAT short-circuit protection —
封装 PG-DSO-8-72 (SOIC-8 wide-body) PG-DSO-8 (DSO-8)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
Drives IGBT, MOSFET, SiC MOSFET —
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Number of Drivers — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Technology — Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
上升时间 — 15 ns
下降时间 — 30 ns
工作温度 — -40 C to +125 C
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET

数据手册与资源

浏览全部产品 创建 BOM 获取报价