1ED3127MU12FXUMA1 vs 1ED3124MC12HXUMA1 Comparación
Comparación detallada lado a lado de 1ED3127MU12FXUMA1 por Infineon y 1ED3124MC12HXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 1ED3127MU12FXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,74 | $1,45 |
| Función | Single-channel isolated gate driver | — |
| Número de salidas | 1 | 1 |
| Configuración de salida | High-side / Low-side, Inverting / Non-Inverting | — |
| Peak Output Current | 10 A (source/sink) | — |
| Continuous Output Current | 9 A | — |
| Supply Voltage (VCC2 secondary) | 12 V to 35 V | — |
| Supply Voltage (VCC1 primary) | 3 V to 5.5 V | — |
| Propagation Delay (typ.) | 15 ns | — |
| Delay Matching (typ.) | 30 ns | — |
| Galvanic Isolation | 3000 Vrms (coreless transformer) | — |
| Rango de temperatura de funcionamiento | -40C to +125C | — |
| Protection Features | Miller clamp, UVLO, DESAT short-circuit protection | — |
| Encapsulado | PG-DSO-8-72 (SOIC-8 wide-body) | PG-DSO-8 (DSO-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Drives | IGBT, MOSFET, SiC MOSFET | — |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Technology | — | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Tiempo de subida | — | 15 ns |
| Tiempo de bajada | — | 30 ns |
| Temperatura de funcionamiento | — | -40 C to +125 C |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |