1EDB8275FXUMA1 vs 2ED21834S06JXUMA1 Comparison

Detailed side-by-side comparison of 1EDB8275FXUMA1 by Infineon and 2ED21834S06JXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EDB8275FXUMA1 2ED21834S06JXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Function Single-channel isolated gate driver —
Number of Channels 1 —
Isolation Type Magnetic coupling (coreless transformer) —
Isolation Voltage (Vrms) 3000 Vrms —
Peak Source Current (typ.) 5.4 A —
Peak Sink Current (typ.) 9.8 A —
CMTI (min.) 300 V/ns —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay value] —
Output-side Supply Voltage Up to 40 V (per datasheet family) —
Input-side Supply Voltage [DATA_NEEDED: VCC input range] —
UVLO Yes (input and output side) —
Miller Clamp Available in family —
Package PG-DSO-8 (150 mil wide-body) PG-DSO-14-49 (DSO-14)
Operating Temperature Range -40 C to +125 C (industrial) -40 °C to +125 °C
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Product Type — Half-Bridge Gate Driver IC
Configuration — Half-bridge (high-side + low-side)
Maximum Offset Voltage (VBS) — 650 V
Typical Sink Current — 2.5 A
Typical Source Current — 2.5 A
Input Logic — Non-Inverting
Integrated Bootstrap Diode — Yes
Technology — SOI (Silicon-On-Insulator) high-voltage
Under-Voltage Lockout (UVLO) — Yes (VCC and VBS)
Number of Pins — 14
Standard Reel Quantity — 3000

Datasheets & Resources

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