1EDB8275FXUMA1 - 5.4/9.8A Isolated Gate Driver | Infineon
MPN: 1EDB8275FXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.52 | $25.20 |
| 100 | $2.18 | $218.00 |
| 500 | $1.94 | $970.00 |
| 1,000 | $1.72 | $1,720.00 |
Drop-in alternatives for 1EDB8275FXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →1EDB8275FXUMA1 Maximum Ratings & Electrical Characteristics
| Function | Single-channel isolated gate driver |
| Number of Channels | 1 |
| Isolation Type | Magnetic coupling (coreless transformer) |
| Isolation Voltage (Vrms) | 3000 Vrms |
| Peak Source Current (typ.) | 5.4 A |
| Peak Sink Current (typ.) | 9.8 A |
| CMTI (min.) | 300 V/ns |
| Output-side Supply Voltage | Up to 40 V (per datasheet family) |
| UVLO | Yes (input and output side) |
| Miller Clamp | Available in family |
| Package | PG-DSO-8 (150 mil wide-body) |
| Operating Temperature Range | -40 C to +125 C (industrial) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
1EDB8275FXUMA1 Pin Configuration
| Pin 1 | VDD1 — Input-side supply voltage |
| Pin 2 | GND1 — Input-side ground (logic reference) |
| Pin 3 | IN+ — Non-inverting PWM input |
| Pin 4 | IN- — Inverting PWM input (or tied to GND1 for non-inverting only) |
| Pin 5 | GND2 — Output-side ground (power reference) |
| Pin 6 | VDD2 — Output-side supply voltage (gate-drive rail) |
| Pin 7 | OUT — Gate-drive output to power switch gate |
| Pin 8 | NC — Not connected (per datasheet) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
1EDB8275FXUMA1 is suitable for 6 applications: Solar Inverter Primary-Side Gate Driving, EV Onboard Charger Totem-Pole PFC, Industrial Servo Drive IGBT Bridge, Telecom Rectifier and Server PSU, Renewable Energy Microinverter, Industrial Welding and Plasma Power.
Solar Inverter Primary-Side Gate Driving
The 1EDB8275FXUMA1 is well-matched to solar-string inverter primary-side gate driving for IGBT and SiC boost/PFC stages. Its 3000 Vrms galvanic isolation supports the reinforced insulation required between the low-voltage DSP/MCU and the high-voltage DC-link switch node, while 300 V/ns CMTI ensures signal integrity at dV/dt values typical of 1200 V SiC modules. The 5.4 A source / 9.8 A sink currents let designers drive 1200 V SiC MOSFETs at switching frequencies of 50-100 kHz without an external booster. Place the driver within 2 cm of the power switch to minimize gate-loop inductance, and use a 4.7 uF X7R decoupling capacitor close to the VCC2 pin.
Recommended
EV Onboard Charger Totem-Pole PFC
In a 22 kW onboard charger totem-pole PFC stage, the 1EDB8275FXUMA1 drives 650 V or 1200 V GaN HEMTs with sub-10 ns propagation delay and 300 V/ns CMTI tolerance. Its PG-DSO-8 wide-body 150 mil package provides the creepage and clearance distances required for reinforced insulation under IEC 60747-17, simplifying end-equipment safety certification. The high sink-current capability (9.8 A) prevents Miller-induced turn-on in half-bridge configurations, a common failure mode in high-density GaN designs. Designers should pair the driver with a low-inductance gate resistor network (typically 2-10 ohm) and a local 100 nF + 4.7 uF decoupling stack.
Recommended
Industrial Servo Drive IGBT Bridge
The 1EDB8275FXUMA1 is a strong fit for industrial servo drives where 600 V/1200 V IGBT modules operate at 8-20 kHz. Its 3000 Vrms isolation supports the reinforced insulation required between the safe-voltage control side and the hazardous-voltage DC bus, while the 300 V/ns CMTI rating tolerates the high dV/dt events of hard-switched IGBT commutation. According to the Infineon datasheet, the driver's input-side UVLO and output-side UVLO provide fault-tolerant behavior during bus undervoltage conditions. Designers can share the same driver footprint across 600 V and 1200 V IGBT modules by changing only the gate resistor value.
Recommended
Telecom Rectifier and Server PSU
For high-density 48 V telecom rectifiers and CRPS server PSUs, the 1EDB8275FXUMA1 drives the primary-side switches of a totem-pole PFC or dual-active-bridge converter. The PG-DSO-8 wide-body package fits the dense layouts common in 1U/2U power supplies, and the 5.4 A peak source current supports 100 V/650 V GaN switches at switching frequencies of 200-500 kHz. The 300 V/ns CMTI ensures robust operation across the wide load transients of dynamic server workloads. Place the driver adjacent to the GaN switch and use a 4-layer PCB with a dedicated ground plane to minimize EMI.
Recommended
Renewable Energy Microinverter
Microinverters attached to individual photovoltaic panels require a compact isolated gate driver that can deliver high drive currents at low cost per watt. The 1EDB8275FXUMA1 meets these needs with 5.4 A / 9.8 A peak drive, 3000 Vrms isolation, and a small PG-DSO-8 wide-body footprint. Its 300 V/ns CMTI is sufficient for the 600 V/1200 V SiC MOSFETs used in modern microinverter designs. The driver's industrial -40 C to +125 C operating range supports outdoor solar installations without additional thermal management. Use a bootstrap or isolated DC/DC supply to power the output-side VCC rail.
Recommended
Industrial Welding and Plasma Power
Industrial welding and plasma-cutting power supplies require isolated gate drivers that can survive the harsh dV/dt of arc-load transients. The 1EDB8275FXUMA1's 300 V/ns CMTI and 3000 Vrms isolation make it a strong candidate for the primary-side IGBT driver in such equipment. Its high sink current (9.8 A) ensures robust turn-off under Miller-induced dv/dt events, while the wide-body package's creepage supports the pollution-degree-2 environment typical of industrial enclosures. Designers should add a small RC snubber across the IGBT to limit voltage overshoot and reduce EMI radiated emissions.
Recommended
Recommended Products Summary
Engineering reference data for 1EDB8275FXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDB8275FXTMA1 | 1EDB7275FXUMA1 | 1EDN8511BXUSA1 | 2EDN7534FXTMA1 | 1ED3323MC12NXUMA1 | 2ED2183S06FXUMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-8 (150 mil wide-body) | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same |
| Channel Count | 1 | 1 | 1 | 1 | 2 | 1 | 2 (half-bridge) |
| Peak Source Current (typ.) | 5.4 A | 5.4 A | [DATA_NEEDED] | ~1.5 A | ~4 A | ~4.5 A | ~2.5 A |
| Peak Sink Current (typ.) | 9.8 A | 9.8 A | [DATA_NEEDED] | ~1.5 A | ~4 A | ~4.5 A | ~2.5 A |
| Isolation Voltage (Vrms) | 3000 Vrms | 3000 Vrms | 3000 Vrms | Non-isolated | Non-isolated | 3000+ Vrms (functional-reinforced) | Non-isolated |
| CMTI (min.) | 300 V/ns | 300 V/ns | [DATA_NEEDED] | N/A (non-isolated) | N/A (non-isolated) | 200 V/ns | N/A (non-isolated) |
| Topology | Single low-side, isolated | Single low-side, isolated | Single low-side, isolated | Single low-side, non-isolated | Dual low-side, non-isolated | Single, isolated EiceIVER | Half-bridge, non-isolated |
Key Differentiators
- Highest CMTI in PG-DSO-8 wide-body family (vs 1ED3323MC12NXUMA1)
- Galvanic isolation built in (vs 2EDN7534FXTMA1)
- Asymmetric high source/sink drive strength (vs 1EDN8511BXUSA1)
Design Notes
Place the 1EDB8275FXUMA1 within 2 cm of the power switch's gate pin to minimize gate-loop inductance. Use a 4-layer PCB with a continuous ground plane on layer 2 directly under the driver; keep input-side and output-side grounds isolated and connect them only at the driver's GND1/GND2 pins. A 100 nF X7R capacitor plus a 4.7 uF X7R bulk capacitor must be placed within 5 mm of the VDD2 pin to suppress switching-noise-induced UVLO trips.
Estimated: at 100 kHz switching with 5 nC Qg and 18 V VDD2, gate-drive losses are approximately 0.9 W per channel (P_gate = Qg * Vgs * fsw). The PG-DSO-8 wide-body package has a theta_JA of approximately 110 C/W on a 4-layer JEDEC test board, so the junction rises about 100 C above ambient at full power. For continuous operation above 100 kHz, place thermal vias under the exposed pad of the PG-DSO-8 footprint and use at least 1 square inch of top-side copper pour.
Do not connect input-side ground (GND1) to output-side ground (GND2) anywhere except at the driver's pins; an external bridge defeats the galvanic isolation and creates a safety hazard. The IN- pin must not be left floating - tie it to GND1 or drive it with a complementary PWM signal, depending on logic convention. Finally, verify that the bootstrap or isolated DC/DC supply can source the 5.4 A peak transient without droop; an undersized supply causes VDD2 UVLO events and erratic switching.
Compliance Information
RoHS and REACH compliance per Infineon product page. Halogen-free per Infineon datasheet. AEC-Q100 status not confirmed in provided data - confirm with Infineon for automotive applications.
