1EDB9275FXUMA1 vs 1EDB7275FXUMA1 Comparison

Detailed side-by-side comparison of 1EDB9275FXUMA1 by Infineon and 1EDB7275FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EDB9275FXUMA1 1EDB7275FXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $1.68
Function Isolated single-channel gate driver (high-side, inverting) β€”
Number of Channels 1 β€”
Output Configuration High-side half-bridge β€”
Peak Source/Sink Current 9 A β€”
Input Voltage (VDD) 3 V to 15 V β€”
Isolation Voltage (Vrms) 3 kVrms β€”
Common-Mode Transient Immunity (CMTI) 300 V/ns 300 V/ns (minimum)
Clamping Response Time 20 ns β€”
Propagation Delay [DATA_NEEDED: propagation delay value] +6 / -4 ns (typical, see datasheet family)
Input Logic Inverting β€”
Operating Temperature Range -40 C to +125 C [DATA_NEEDED: full operating temperature range]
Package PG-DSO-8 (150 mil) PG-DSO-8 (150 mil DSO, 8-pin)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL rating] β€”
RoHS Status Compliant Compliant
Isolation Technology Coreless transformer (CT) Coreless transformer (CT) magnetic coupling
Product Type β€” Single-channel isolated gate driver IC
Topology Supported β€” High-side / low-side, half-bridge (with two parts)
Isolation Voltage (Viso) β€” 3000 Vrms
Peak Source Output Current β€” 5.4 A (typical)
Peak Sink Output Current β€” 9.8 A (typical)
Supported Switch Technologies β€” Si MOSFET, SiC MOSFET, GaN HEMT
UVLO Protection β€” Yes (secondary side)
Marking Code β€” 1B7275A

Datasheets & Resources

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