1EDB9275FXUMA1 - Isolated Gate Driver IC, High-Side, 9A, PG-DSO-8 | Infineon
MPN: 1EDB9275FXUMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.56 | $25.60 |
| 100 | $2.28 | $228.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.83 | $1,830.00 |
| 2,500 | $1.62 | $4,050.00 |
1EDB9275FXUMA1 Overview
An isolated gate driver IC is a semiconductor that transmits a low-power PWM control signal across a galvanic isolation barrier while providing the high peak currents needed to quickly charge and discharge the gate capacitance of a power switch. Isolated drivers sit one level above non-isolated gate drivers in the power-management hierarchy: gate driver -> power management IC -> semiconductor, and they enable high-side switching and safety isolation across the high-voltage domain boundary.
Key features of the 1EDB9275F family include 3 kVrms isolation, 300 V/ns CMTI, 20 ns clamping response time, and tight part-to-part skew for parallel operation. The device supports an input supply of 3 V to 15 V and includes tight timing specifications with low propagation delay, making it suitable as a modern alternative to optocoupler- or pulse-transformer-based high-side drive solutions that are limited in speed and aging behavior.
The 1EDB9275F uses Infineon's coreless transformer (CT) isolation technology to transmit the gate-drive signal across the isolation barrier. Compared with optocouplers, this approach eliminates LED aging effects, provides superior CMTI performance, and delivers a stable propagation delay across the full operating temperature range. The inverting input logic of the 1EDB9275FXUMA1 variant simplifies level shifting in half-bridge configurations where the low-side drive signal must be inverted to drive the high-side switch.
Typical applications include industrial motor drives, solar inverters, UPS systems, EV charging power modules, and switched-mode power supplies with high-side MOSFET or IGBT switches. Designers choose the 1EDBx275F family when fast switching, robust isolation, and small PCB footprint matter more than absolute minimum propagation delay.
When designing with this driver, place the bootstrap capacitor close to the BST and HS pins and verify that the bootstrap voltage is refreshed every switching cycle. The high CMTI rating means the part tolerates extremely fast dv/dt transitions on the high-side switch node, but PCB layout still matters: keep the gate-drive loop area minimal and route the floating supply return directly to the HS pin.
Drop-in alternatives for 1EDB9275FXUMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 1EDB9275FXUMA1 (same form factor and footprint) β differing in Package, Common-Mode Transient Immunity (CMTI), Isolation Technology, Number of Channels, Isolation Voltage (Vrms).
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
1EDN9275FXUMA1
β Drop-Inπ Reference alternative (not in catalog)
1EDB7259KXUMA1
β Drop-Inπ Reference alternative (not in catalog)
2EDB7259KXUMA1
β Drop-Inβ In Stock
$1.22 / Unit
View Datasheet β1ED020I12B2XUMA1
β Drop-Inβ In Stock
$2.65 / Unit
View Datasheet β1EDB9275FXUMA1 Maximum Ratings & Electrical Characteristics
| Function | Isolated single-channel gate driver (high-side, inverting) |
| Number of Channels | 1 |
| Output Configuration | High-side half-bridge |
| Peak Source/Sink Current | 9 A |
| Input Voltage (VDD) | 3 V to 15 V |
| Isolation Voltage (Vrms) | 3 kVrms |
| Common-Mode Transient Immunity (CMTI) | 300 V/ns |
| Clamping Response Time | 20 ns |
| Input Logic | Inverting |
| Operating Temperature Range | -40 C to +125 C |
| Package | PG-DSO-8 (150 mil) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Isolation Technology | Coreless transformer (CT) |
1EDB9275FXUMA1 Pin Configuration
| Pin 1 | VDD1 β Input-side supply voltage (3 V to 15 V) |
| Pin 2 | GND1 β Input-side ground reference |
| Pin 3 | IN+ β Non-inverted PWM input (logic low on 1EDB9275F variant turns output on) |
| Pin 4 | NC β Not connected (per datasheet) |
| Pin 5 | GND2 β Output-side floating ground reference (connected to HS) |
| Pin 6 | OUT β Gate-drive output to the high-side power switch gate |
| Pin 7 | VDD2 β Output-side floating supply (bootstrapped from VDD1) |
| Pin 8 | HS β High-side switch node reference (floating return) |
Typical Applications
1EDB9275FXUMA1 is suitable for 6 applications: Industrial Motor Drive Half-Bridge, Solar Inverter Power Stage, Uninterruptible Power Supply (UPS), EV Charging Power Module, Switched-Mode Power Supply (SMPS), Industrial Welding Inverter.
Industrial Motor Drive Half-Bridge
The 1EDB9275FXUMA1 is well suited as the high-side gate driver in industrial motor-drive half-bridge stages where the upper switch floats at the DC bus voltage. Its 3 kVrms isolation allows the control MCU to remain safely grounded while the gate signal crosses to the high-side domain, and the 9 A peak drive current quickly charges the IGBT or MOSFET gate capacitance. The 300 V/ns CMTI rating ensures reliable operation during fast IGBT turn-on transitions where the switch node swings at very high dv/dt. Place a bootstrap capacitor between BST and HS, refresh it every cycle, and keep the gate-drive loop area minimal for best switching performance.
Recommended
Solar Inverter Power Stage
In solar inverter power stages, the 1EDB9275FXUMA1 drives the high-side IGBTs or SiC MOSFETs of the boost or full-bridge stage referenced to the panel's high-voltage DC bus. The 9 A peak output current handles large gate charges of 600 V to 1200 V class switches, while the 3 kVrms isolation meets the reinforced insulation required between the grid-side power path and the user-accessible control interface. The 300 V/ns CMTI exceeds the dv/dt seen at typical 50 kHz to 100 kHz switching frequencies, allowing designers to push switching frequency higher for smaller magnetics.
Recommended
Uninterruptible Power Supply (UPS)
Within UPS systems, the 1EDB9275FXUMA1 isolates and drives the high-side switches of the inverter bridge that converts DC battery voltage to AC mains voltage. The driver's 9 A peak current accelerates switching transitions in IGBT modules, reducing switching losses and improving overall inverter efficiency. Its 3 kVrms isolation barrier protects the low-voltage DSP controller from the high-voltage DC bus, while the 300 V/ns CMTI ensures immunity from the fast transients produced during IGBT turn-off events. The compact PG-DSO-8 footprint allows dense PCB layouts in the inverter power module.
Recommended
EV Charging Power Module
EV charging power modules use the 1EDB9275FXUMA1 to drive the high-side IGBTs or SiC MOSFETs in the totem-pole or full-bridge PFC and DC-DC stages. The driver's 3 kVrms isolation satisfies the reinforced isolation requirement between the high-voltage traction battery domain and the LV control board mandated by EV charging standards. The 9 A peak current charges large gate-charge devices quickly, while 300 V/ns CMTI tolerates the extreme dv/dt of SiC switches. The PG-DSO-8 footprint minimizes PCB area in compact onboard charger designs.
Recommended
Switched-Mode Power Supply (SMPS)
In high-power SMPS designs the 1EDB9275FXUMA1 drives the high-side primary MOSFET in isolated topologies such as full-bridge, half-bridge, and active-clamp forward converters. The 9 A peak current and 300 V/ns CMTI support fast-switching primary-side MOSFETs that minimize transformer size and improve power density. The 3 kVrms isolation barrier between the primary switching domain and the secondary-side control circuit eliminates the need for an additional isolated gate-drive transformer or optocoupler. Pair the 1EDB9275FXUMA1 with a low-side non-isolated driver such as the 1EDN7136UXTSA1 for the complementary low-side switch.
Recommended
Industrial Welding Inverter
Industrial welding inverters use the 1EDB9275FXUMA1 to drive the high-side IGBTs of the welding arc-forming bridge, where voltage isolation between the welding electrode (referenced to the workpiece) and the user control panel is critical for operator safety. The 3 kVrms isolation rating of the 1EDB9275FXUMA1 supports this safety boundary while its 9 A peak output current rapidly charges and discharges the gate of high-current IGBT modules used at welding currents of 100 A and above. The 300 V/ns CMTI tolerates the harsh switching environment of arc welding where load currents change abruptly.
Recommended
Recommended Products Summary
Engineering reference data for 1EDB9275FXUMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDN9275FXUMA1 | 1EDB7259KXUMA1 | 2EDB7259KXUMA1 | 1ED020I12B2XUMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-8 (150 mil) | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same | PG-DSO-8 (150 mil) - same |
| Peak Drive Current | 9 A | 9 A | 5 A (-44%) | 5 A per channel (-44%) | 2 A (-78%) |
| Isolation Voltage | 3 kVrms | 3 kVrms | 1.5 kVrms (-50%) | 1.5 kVrms (-50%) | 1.2 kV functional (-60%) |
| CMTI | 300 V/ns | 300 V/ns | 200 V/ns (-33%) | 200 V/ns (-33%) | 100 V/ns (-67%) |
| Input Logic | Inverting | Non-inverting | Inverting | Inverting | Non-inverting |
| Number of Channels | 1 | 1 | 1 | 2 | 1 |
| Operating Temperature Range | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C |
Key Differentiators
- Higher peak drive current within PG-DSO-8 isolated family (vs 1EDB7259KXUMA1)
- Reinforced 3 kVrms isolation vs basic isolation in lower-cost family (vs 1EDB7259KXUMA1)
- Highest CMTI rating in the 1EDBx275F family (vs 2EDB7259KXUMA1)
- Inverting logic variant for half-bridge control simplification (vs 1EDN9275FXUMA1)
Design Notes
Place the bootstrap capacitor (typically 100 nF to 1 uF ceramic) as close as possible between pins BST (VDD2) and HS to minimize the high-side gate-drive loop inductance. Long traces between BST and HS introduce parasitic inductance that slows the high-side turn-on and may cause the bootstrap voltage to ring excessively. Use a wide ground pour on both input and output sides and stitch them only at the isolation barrier per datasheet guidance.
The bootstrap supply (VDD2 to HS) must be refreshed every switching cycle through the bootstrap diode from VDD1. Choose a fast-recovery diode (trr < 100 ns) or a SiC Schottky diode to minimize reverse-recovery charge that would otherwise appear as negative voltage on the HS node at turn-on. A series resistor of 2-5 ohm in the bootstrap path can slow the recharge transient and reduce ringing.
Do not exceed the maximum bootstrap voltage (VDD2-VHS) of typically 18 V as specified in the datasheet; many IGBTs require 15 V gate drive and some SiC MOSFETs need 18 V to 20 V. Also verify that the high-side switch node voltage (VHS) does not exceed the driver's maximum offset voltage rating during transient events such as short-circuit turn-off, where inductive kick can drive the HS node above the DC bus.
Estimated: at 100 kHz switching frequency with 30 nC total gate charge, the gate-drive power dissipation in the PG-DSO-8 is approximately P_gate = Qg * VDD2 * fsw = 30 nC * 15 V * 100 kHz = 45 mW per channel. The PG-DSO-8 has theta_JA around 80-100 C/W, so junction rise above ambient is approximately 4-5 C - well within the 150 C maximum junction rating.
The 300 V/ns CMTI rating means the driver tolerates very fast dv/dt transients on the HS node, but the input-side circuitry (IN, VDD1, GND1) is still vulnerable to ground bounce if the input ground return is shared with noisy power paths. Keep the input ground return local to the controller and provide a small RC filter (10 ohm + 100 pF) on the IN pin if long traces are unavoidable.
Compliance Information
RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified - this is a standard industrial-grade part.
