1EDN7136UXTSA1 vs 1EDN7126GXTMA1 Comparison

Detailed side-by-side comparison of 1EDN7136UXTSA1 by Infineon and 1EDN7126GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EDN7136UXTSA1 1EDN7126GXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Function High-side / Low-side gate driver IC Single-channel TDI gate driver for GaN HEMT and Si MOSFET
Driven Device Type GaN HEMT, N-channel MOSFET —
Number of Outputs 2 (high-side and low-side) —
Peak Source Current 1 A 1.5 A
Peak Sink Current 2 A 1.5 A
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) Truly Differential Input (TDI)
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
Operating Temperature Range -40 C to +150 C -40C to +125C
Package TSNP-6 with exposed pad (PG-VSON-1) PG-VSON-10-4
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Halogen Free Yes (per Infineon product family convention) —
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Configuration — Non-Inverting
Channel Type — Single
Driven Supply Voltage — [DATA_NEEDED: VCC max value]
Common-Mode Voltage (CMR) — 200 V
Propagation Delay (Typ.) — [DATA_NEEDED: tpd typical value]
Rise / Fall Time (Typ.) — [DATA_NEEDED: tr / tf typical value]
Reach — Compliant
Input Logic Compatibility — 3.3 V / 5 V TTL/CMOS (TDI)

Datasheets & Resources

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