1EDN7136UXTSA1 vs 1EDN7126GXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 1EDN7136UXTSA1 sa pamamagitan ng Infineon at 1EDN7126GXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro 1EDN7136UXTSA1 1EDN7126GXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Fungsi High-side / Low-side gate driver IC Single-channel TDI gate driver for GaN HEMT and Si MOSFET
Driven Device Type GaN HEMT, N-channel MOSFET —
Bilang ng Outputs 2 (high-side and low-side) —
Peak Source Current 1 A 1.5 A
Peak Sink Current 2 A 1.5 A
Driver Supply Voltage (Max) 200 V —
Logic Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Input Type Truly Differential Input (TDI) Truly Differential Input (TDI)
Active Miller Clamp Yes (integrated) —
Under-Voltage Lockout (UVLO) Yes (driver supply and logic input) —
Propagation Delay (Typ) [DATA_NEEDED: propagation delay value] —
Hanay ng Temperature na Operasyon -40 C to +150 C -40C to +125C
Packhaging TSNP-6 with exposed pad (PG-VSON-1) PG-VSON-10-4
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Wala sa Halogen Yes (per Infineon product family convention) —
Level ng MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Configuration — Non-Inverting
Channel Type — Single
Driven Supply Voltage — [DATA_NEEDED: VCC max value]
Common-Mode Voltage (CMR) — 200 V
Propagation Delay (Typ.) — [DATA_NEEDED: tpd typical value]
Rise / Fall Time (Typ.) — [DATA_NEEDED: tr / tf typical value]
Reach — Compliant
Input Logic Compatibility — 3.3 V / 5 V TTL/CMOS (TDI)

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