1EDN7512GXTMA1 vs 1EDN7116GXTMA1 Comparison
Detailed side-by-side comparison of 1EDN7512GXTMA1 by Infineon and 1EDN7116GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7512GXTMA1
1EDN7512GXTMA1 - 4A/8A Low-Side Gate Driver | Infineon
1EDN7512GXTMA1 β ActiveInfineon
1EDN7116GXTMA1
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
1EDN7116GXTMA1 β ActiveSpecification Comparison
| Parameter | 1EDN7512GXTMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.84 |
| Function | Low-side gate driver, single channel | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Peak Source Current | 4 A | 2 A (typ) |
| Peak Sink Current | 8 A | 4 A (typ) |
| Number of Outputs | 1 | β |
| Logic Inputs | Inverting and Non-Inverting | β |
| Propagation Delay (typical) | 19 ns | β |
| Input Voltage Range | [DATA_NEEDED: VCC range] | β |
| Input Robustness (negative) | -10 V | β |
| Rise Time | [DATA_NEEDED: typical tr] | β |
| Fall Time | [DATA_NEEDED: typical tf] | β |
| UVLO | [DATA_NEEDED: UVLO threshold] | Yes (VCC and gate-rail monitored) |
| Operating Temperature Range | -40 C to +125 C | -40 Β°C to +125 Β°C |
| Package | PG-WSON-6-1 (6-pin WSON with exposed pad) | PG-VSON-10-4 (3.0 mm Γ 3.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL3 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Driver Configuration | β | Non-inverting, single low-side |
| Number of Drivers | β | 1 |
| Input Type | β | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | β | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | β | 200 V (max) |
| Propagation Delay (Typ) | β | 9 ns |
| Rise Time (Typ) | β | 3 ns |
| Fall Time (Typ) | β | 3 ns |
| Quiescent Current (Typ) | β | 0.6 mA |
| Miller Clamp | β | Integrated, active |
| Target Switch Technology | β | GaN HEMT (CoolGaN) or Si MOSFET |