1EDN7512GXTMA1 vs 1EDN7116GXTMA1 Vergleich
Detaillierter Direktvergleich von 1EDN7512GXTMA1 von Infineon und 1EDN7116GXTMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 1EDN7512GXTMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,82 | $0,84 |
| Funktion | Low-side gate driver, single channel | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Peak Source Current | 4 A | 2 A (typ) |
| Peak Sink Current | 8 A | 4 A (typ) |
| Anzahl der Ausgänge | 1 | — |
| Logic Inputs | Inverting and Non-Inverting | — |
| Propagation Delay (typical) | 19 ns | — |
| Eingangsspannungsbereich | [DATA_NEEDED: VCC range] | — |
| Input Robustness (negative) | -10 V | — |
| Anstiegszeit | [DATA_NEEDED: typical tr] | — |
| Abfallzeit | [DATA_NEEDED: typical tf] | — |
| UVLO | [DATA_NEEDED: UVLO threshold] | Yes (VCC and gate-rail monitored) |
| Betriebstemperaturbereich | -40 C to +125 C | -40 °C to +125 °C |
| Gehäuse | PG-WSON-6-1 (6-pin WSON with exposed pad) | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating] | MSL3 |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Driver Configuration | — | Non-inverting, single low-side |
| Number of Drivers | — | 1 |
| Input Type | — | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |