1EDN7512GXTMA1 vs 1EDN7116GXTMA1 对比

详细并排对比 1EDN7512GXTMA1 出自 Infineon 和 1EDN7116GXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1EDN7512GXTMA1 1EDN7512GXTMA1 - 4A/8A Low-Side Gate Driver | Infineon

1EDN7512GXTMA1 - 4A/8A Low-Side Gate Driver | Infineon

1EDN7512GXTMA1 ✓ 量产中

规格对比

参数 1EDN7512GXTMA1 1EDN7116GXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $0.84
功能 Low-side gate driver, single channel Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs
Peak Source Current 4 A 2 A (typ)
Peak Sink Current 8 A 4 A (typ)
输出数量 1 —
Logic Inputs Inverting and Non-Inverting —
Propagation Delay (typical) 19 ns —
输入电压范围 [DATA_NEEDED: VCC range] —
Input Robustness (negative) -10 V —
上升时间 [DATA_NEEDED: typical tr] —
下降时间 [DATA_NEEDED: typical tf] —
UVLO [DATA_NEEDED: UVLO threshold] Yes (VCC and gate-rail monitored)
工作温度范围 -40 C to +125 C -40 °C to +125 °C
封装 PG-WSON-6-1 (6-pin WSON with exposed pad) PG-VSON-10-4 (3.0 mm × 3.0 mm)
安装类型 Surface Mount Surface Mount
MSL 等级 [DATA_NEEDED: MSL rating] MSL3
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Driver Configuration — Non-inverting, single low-side
Number of Drivers — 1
Input Type — Truly Differential Input (TDI)
Supply Voltage (VCC) — 4.5 V to 5.5 V
Switch-Node Blocking Voltage — 200 V (max)
Propagation Delay (Typ) — 9 ns
Rise Time (Typ) — 3 ns
Fall Time (Typ) — 3 ns
Quiescent Current (Typ) — 0.6 mA
Miller Clamp — Integrated, active
Target Switch Technology — GaN HEMT (CoolGaN) or Si MOSFET

数据手册与资源

浏览全部产品 创建 BOM 获取报价