2ED2103S06FXUMA1 vs IR2104SPBF Comparison
Detailed side-by-side comparison of 2ED2103S06FXUMA1 by Infineon and IR2104SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 2ED2103S06FXUMA1 | IR2104SPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Function | Half-Bridge Gate Driver | Half-bridge gate driver |
| Configuration | Non-Inverting | High and Low Side |
| Technology | High-Voltage Level Shift (SOI) | — |
| Number of Drivers | 2 (high-side + low-side) | 2 (high-side + low-side) |
| Driven Device Type | IGBT, N-Channel MOSFET | — |
| High-Side Offset Voltage (Max) | 650 V | — |
| Bootstrap Voltage (Max) | 675 V | — |
| Supply Voltage (VCC) | 10 V to 20 V | — |
| Source Current (typ.) | 0.29 A | — |
| Sink Current (typ.) | 0.7 A | — |
| Bootstrap Diode | Integrated | — |
| Logic Input Compatibility | 3.3 V / 5 V | 3.3 V, 5 V, 15 V CMOS/LSTTL |
| Under-Voltage Lockout (UVLO) | Yes (VCC and VBS) | — |
| Package | PG-DSO-8-69 (DSO-8 with exposed pad) | 8-pin SOIC |
| Mounting Type | Surface Mount | — |
| Operating Temperature Range | -40C to +125C | -40 C to +125 C |
| MSL Level | [DATA_NEEDED: MSL level] | — |
| RoHS Status | Compliant | Compliant (PBF suffix indicates lead-free) |
| Input Type | — | Logic (non-inverting) |
| Maximum Offset / Bootstrap Supply Voltage | — | 600 V |
| Gate Drive Supply Range (VCC) | — | 10 V to 20 V |
| Output Source Current | — | 130 mA typical |
| Output Sink Current | — | 270 mA typical |
| Propagation Delay | — | 680 ns typical |
| Rise Time | — | 160 ns typical |
| Fall Time | — | 60 ns typical |
| Undervoltage Lockout | — | Yes (VCC UVLO) |
| Deadtime | — | Internally set |
| Cross-Conduction Prevention | — | Yes |