2ED2103S06FXUMA1 vs IR2104SPBF 对比

详细并排对比 2ED2103S06FXUMA1 出自 Infineon 和 IR2104SPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED2103S06FXUMA1 2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2103S06FXUMA1 ✓ 量产中
Infineon
IR2104SPBF IR2104SPBF - 600V Half-Bridge Gate Driver | Infineon

IR2104SPBF - 600V Half-Bridge Gate Driver | Infineon

IR2104SPBF ✓ 量产中

规格对比

参数 2ED2103S06FXUMA1 IR2104SPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.94 $0.41
功能 Half-Bridge Gate Driver Half-bridge gate driver
Configuration Non-Inverting High and Low Side
Technology High-Voltage Level Shift (SOI) —
Number of Drivers 2 (high-side + low-side) 2 (high-side + low-side)
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated —
Logic Input Compatibility 3.3 V / 5 V 3.3 V, 5 V, 15 V CMOS/LSTTL
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
封装 PG-DSO-8-69 (DSO-8 with exposed pad) 8-pin SOIC
安装类型 Surface Mount —
工作温度范围 -40C to +125C -40 C to +125 C
MSL 等级 [DATA_NEEDED: MSL level] —
RoHS 状态 Compliant Compliant (PBF suffix indicates lead-free)
Input Type — Logic (non-inverting)
Maximum Offset / Bootstrap Supply Voltage — 600 V
Gate Drive Supply Range (VCC) — 10 V to 20 V
Output Source Current — 130 mA typical
Output Sink Current — 270 mA typical
Propagation Delay — 680 ns typical
上升时间 — 160 ns typical
下降时间 — 60 ns typical
Undervoltage Lockout — Yes (VCC UVLO)
Deadtime — Internally set
Cross-Conduction Prevention — Yes

数据手册与资源

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