2ED2304S06F vs 2ED2304S06FXUMA1 Comparison
Detailed side-by-side comparison of 2ED2304S06F by Infineon and 2ED2304S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 2ED2304S06F | 2ED2304S06FXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.66 |
| Product Type | Half-Bridge Gate Driver IC | — |
| Topology | High-side + Low-side, half-bridge | — |
| Technology | Infineon thin-film SOI (Silicon-On-Insulator) | Infineon thin-film SOI |
| Maximum Blocking Voltage (High-Side) | 650 V | — |
| Source Current (typ.) | 0.36 A | 0.36 A |
| Sink Current (typ.) | 0.7 A | 0.7 A |
| Integrated Bootstrap Diode | Yes | — |
| Logic Input Compatibility | 3.3 V CMOS / LSTTL (Schmitt trigger with hysteresis, pull-down) | — |
| Input Pins | LIN (low-side in), HIN (high-side in) | — |
| Shoot-Through Protection | Built-in interlock logic | — |
| Package | PG-DSO-8-910 (DSO-8) | PG-DSO-8-910 (DSO-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | — |
| RoHS Status | Compliant | Compliant |
| Target Power Devices | IGBTs and power MOSFETs | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | — |
| Driver Configuration | — | Half-Bridge (High-Side + Low-Side) |
| Blocking Voltage (High-Side) | — | 650 V |
| Input Logic Compatibility | — | 3.3 V CMOS / LSTTL (Schmitt-trigger) |
| VCC Supply Range | — | 10 V to 17 V |
| Bootstrap Diode | — | Integrated (BSD) |
| Undervoltage Lockout (UVLO) | — | Yes (VCC and VB-VS) |
| Interlock / Anti-Shoot-Through | — | Built-in |
| Propagation Delay (typ.) | — | 200 ns |
| Operating Temperature Range | — | -40C to +125C |
| MSL Level | — | 2 |