2ED2304S06F vs 2ED2304S06FXUMA1 Vergleich
Detaillierter Direktvergleich von 2ED2304S06F von Infineon und 2ED2304S06FXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2ED2304S06F | 2ED2304S06FXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,98 | $0,66 |
| Product Type | Half-Bridge Gate Driver IC | — |
| Topologie | High-side + Low-side, half-bridge | — |
| Technology | Infineon thin-film SOI (Silicon-On-Insulator) | Infineon thin-film SOI |
| Maximum Blocking Voltage (High-Side) | 650 V | — |
| Source Current (typ.) | 0.36 A | 0.36 A |
| Sink Current (typ.) | 0.7 A | 0.7 A |
| Integrated Bootstrap Diode | Yes | — |
| Logic Input Compatibility | 3.3 V CMOS / LSTTL (Schmitt trigger with hysteresis, pull-down) | — |
| Input Pins | LIN (low-side in), HIN (high-side in) | — |
| Shoot-Through Protection | Built-in interlock logic | — |
| Gehäuse | PG-DSO-8-910 (DSO-8) | PG-DSO-8-910 (DSO-8) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| RoHS-Status | Compliant | Compliant |
| Target Power Devices | IGBTs and power MOSFETs | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| Driver Configuration | — | Half-Bridge (High-Side + Low-Side) |
| Blocking Voltage (High-Side) | — | 650 V |
| Input Logic Compatibility | — | 3.3 V CMOS / LSTTL (Schmitt-trigger) |
| VCC Supply Range | — | 10 V to 17 V |
| Bootstrap Diode | — | Integrated (BSD) |
| Undervoltage Lockout (UVLO) | — | Yes (VCC and VB-VS) |
| Interlock / Anti-Shoot-Through | — | Built-in |
| Propagation Delay (typ.) | — | 200 ns |
| Betriebstemperaturbereich | — | -40C to +125C |
| MSL-Level | — | 2 |