2ED2304S06F vs 2ED2304S06FXUMA1 对比
详细并排对比 2ED2304S06F 出自 Infineon 和 2ED2304S06FXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 2ED2304S06F | 2ED2304S06FXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.98 | $0.66 |
| Product Type | Half-Bridge Gate Driver IC | — |
| 拓扑 | High-side + Low-side, half-bridge | — |
| Technology | Infineon thin-film SOI (Silicon-On-Insulator) | Infineon thin-film SOI |
| Maximum Blocking Voltage (High-Side) | 650 V | — |
| Source Current (typ.) | 0.36 A | 0.36 A |
| Sink Current (typ.) | 0.7 A | 0.7 A |
| Integrated Bootstrap Diode | Yes | — |
| Logic Input Compatibility | 3.3 V CMOS / LSTTL (Schmitt trigger with hysteresis, pull-down) | — |
| Input Pins | LIN (low-side in), HIN (high-side in) | — |
| Shoot-Through Protection | Built-in interlock logic | — |
| 封装 | PG-DSO-8-910 (DSO-8) | PG-DSO-8-910 (DSO-8) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数量 | 8 | — |
| RoHS 状态 | Compliant | Compliant |
| Target Power Devices | IGBTs and power MOSFETs | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| Driver Configuration | — | Half-Bridge (High-Side + Low-Side) |
| Blocking Voltage (High-Side) | — | 650 V |
| Input Logic Compatibility | — | 3.3 V CMOS / LSTTL (Schmitt-trigger) |
| VCC Supply Range | — | 10 V to 17 V |
| Bootstrap Diode | — | Integrated (BSD) |
| Undervoltage Lockout (UVLO) | — | Yes (VCC and VB-VS) |
| Interlock / Anti-Shoot-Through | — | Built-in |
| Propagation Delay (typ.) | — | 200 ns |
| 工作温度范围 | — | -40C to +125C |
| MSL 等级 | — | 2 |