2EDL6014ACG2DXTMA1 vs 1ED3124MC12HXUMA1 Comparison
Detailed side-by-side comparison of 2EDL6014ACG2DXTMA1 by Infineon and 1ED3124MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2EDL6014ACG2DXTMA1
2EDL6014ACG2DXTMA1 - 120V Half-Bridge Gate Driver, 4A/6A | Infineon
2EDL6014ACG2DXTMA1 β ActiveInfineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 β ActiveSpecification Comparison
| Parameter | 2EDL6014ACG2DXTMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $1.45 |
| Driver Type | Half-Bridge Gate Driver | β |
| Number of Channels | 2 (high-side + low-side) | β |
| Output Configuration | Non-Inverting | β |
| High-Side Voltage Rating | 120 V | β |
| Source Output Current | 4 A | β |
| Sink Output Current | 6 A | β |
| Supply Voltage (VDD) | 2.97 V to 5.5 V | β |
| Rise Time (typ.) | 4.2 ns | β |
| Fall Time (typ.) | 3.8 ns | β |
| Operating Temperature | -40 C to +125 C | -40 C to +125 C |
| Package | 11-WQFN (2.2 x 2.2 mm) with exposed pad | PG-DSO-8 (DSO-8) |
| Packing Method | Tape & Reel | β |
| Isolation Type | Isolated (level-shifted floating high-side) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology Family | EiceDRIVER 2EDL | β |
| Channel Type | β | Single-channel |
| Configuration | β | High-side / Low-side (non-inverting) |
| Number of Drivers | β | 1 |
| Number of Outputs | β | 1 |
| Peak Source Current | β | 13.5 A |
| Peak Sink Current | β | 14 A |
| Isolation Technology | β | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | β | 5.7 kV |
| Transient Overvoltage | β | 8000 Vpk |
| Supply Voltage (VCC2) | β | 10.5 V to 35 V |
| Supply Current (Max) | β | 1.1 mA |
| Propagation Delay (Typ) | β | 90 ns |
| Rise Time | β | 15 ns |
| Fall Time | β | 30 ns |
| Protections | β | UVLO, Short-Circuit (DESAT) |
| Target Devices | β | IGBT, SiC MOSFET |
| RoHS Status | β | Compliant |