2EDL6014ACG2DXTMA1 vs 1ED3124MC12HXUMA1 对比

详细并排对比 2EDL6014ACG2DXTMA1 出自 Infineon 和 1ED3124MC12HXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 量产中

规格对比

参数 2EDL6014ACG2DXTMA1 1ED3124MC12HXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.18 $1.45
Driver Type Half-Bridge Gate Driver —
Number of Channels 2 (high-side + low-side) —
输出配置 Non-Inverting —
High-Side Voltage Rating 120 V —
Source Output Current 4 A —
Sink Output Current 6 A —
Supply Voltage (VDD) 2.97 V to 5.5 V —
Rise Time (typ.) 4.2 ns —
Fall Time (typ.) 3.8 ns —
工作温度 -40 C to +125 C -40 C to +125 C
封装 11-WQFN (2.2 x 2.2 mm) with exposed pad PG-DSO-8 (DSO-8)
Packing Method Tape & Reel —
Isolation Type Isolated (level-shifted floating high-side) —
安装类型 Surface Mount Surface Mount
Technology Family EiceDRIVER 2EDL —
Channel Type — Single-channel
Configuration — High-side / Low-side (non-inverting)
Number of Drivers — 1
输出数量 — 1
Peak Source Current — 13.5 A
Peak Sink Current — 14 A
Isolation Technology — Magnetic coupling (coreless transformer)
Isolation Voltage (RMS) — 5.7 kV
Transient Overvoltage — 8000 Vpk
Supply Voltage (VCC2) — 10.5 V to 35 V
Supply Current (Max) — 1.1 mA
Propagation Delay (Typ) — 90 ns
上升时间 — 15 ns
下降时间 — 30 ns
Protections — UVLO, Short-Circuit (DESAT)
Target Devices — IGBT, SiC MOSFET
RoHS 状态 — Compliant

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