2EDL6014ACG2DXTMA1 vs 1ED3124MC12HXUMA1 Comparación
Comparación detallada lado a lado de 2EDL6014ACG2DXTMA1 por Infineon y 1ED3124MC12HXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
2EDL6014ACG2DXTMA1 - 120V Half-Bridge Gate Driver, 4A/6A | Infineon
2EDL6014ACG2DXTMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | 2EDL6014ACG2DXTMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,18 | $1,45 |
| Driver Type | Half-Bridge Gate Driver | — |
| Number of Channels | 2 (high-side + low-side) | — |
| Configuración de salida | Non-Inverting | — |
| High-Side Voltage Rating | 120 V | — |
| Source Output Current | 4 A | — |
| Sink Output Current | 6 A | — |
| Supply Voltage (VDD) | 2.97 V to 5.5 V | — |
| Rise Time (typ.) | 4.2 ns | — |
| Fall Time (typ.) | 3.8 ns | — |
| Temperatura de funcionamiento | -40 C to +125 C | -40 C to +125 C |
| Encapsulado | 11-WQFN (2.2 x 2.2 mm) with exposed pad | PG-DSO-8 (DSO-8) |
| Packing Method | Tape & Reel | — |
| Isolation Type | Isolated (level-shifted floating high-side) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology Family | EiceDRIVER 2EDL | — |
| Channel Type | — | Single-channel |
| Configuration | — | High-side / Low-side (non-inverting) |
| Number of Drivers | — | 1 |
| Número de salidas | — | 1 |
| Peak Source Current | — | 13.5 A |
| Peak Sink Current | — | 14 A |
| Isolation Technology | — | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | — | 5.7 kV |
| Transient Overvoltage | — | 8000 Vpk |
| Supply Voltage (VCC2) | — | 10.5 V to 35 V |
| Supply Current (Max) | — | 1.1 mA |
| Propagation Delay (Typ) | — | 90 ns |
| Tiempo de subida | — | 15 ns |
| Tiempo de bajada | — | 30 ns |
| Protections | — | UVLO, Short-Circuit (DESAT) |
| Target Devices | — | IGBT, SiC MOSFET |
| Estado RoHS | — | Compliant |