2EDL900G3XTMA1 - 120V Dual Half-Bridge Gate Driver 4A/6A | Infineon
MPN: 2EDL900G3XTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.47 | $34.70 |
| 100 | $2.95 | $295.00 |
| 500 | $2.55 | $1,275.00 |
| 1,000 | $2.2 | $2,200.00 |
2EDL900G3XTMA1 Overview
What is a gate driver? A gate driver is a power-management IC that sits between a low-power control signal (such as a microcontroller PWM output) and a power semiconductor switch (MOSFET, IGBT, or GaN FET). It provides the high peak currents and voltage levels needed to charge and discharge the gate of the power device quickly, while providing level shifting, isolation, and protection features. Gate drivers sit within the broader power-management hierarchy: gate driver -> driver IC -> power management IC -> semiconductor, and are essential building blocks of any switched-mode power supply (SMPS), motor drive, or Class-D audio amplifier.
Key features of the 2EDL900G3 include 4 V to 16 V gate-drive output, a configurable deadtime or turn-on delay block to prevent shoot-through, and an integrated current-sense amplifier that eliminates an external op-amp in many current-mode control loops. The driver supports multiple PWM modes including tri-state single PWM, HSCC HS, HSCC LS, Hi/Li, and Hi/Li inverted, making it adaptable to nearly any digital controller interface. The 120 V junction-isolation rating supports bus voltages typically up to 80 V depending on derating.
The architecture combines a level-shift high-side channel with a low-side channel on a single die, using Infineon's junction-isolation (JI) process instead of thicker galvanic isolation. This yields a compact 3x3 mm TSNP footprint with strong 4 A source / 6 A sink drive capable of switching GaN FETs in under 10 ns. The integrated current-sense amplifier provides a differential output proportional to the switched current, simplifying peak-current-mode control.
Typical applications include 48 V telecom and server point-of-load converters, industrial SMPS, eMobility auxiliary power, Class-D audio amplifiers, and synchronous rectifier drivers. The GaN-compatible drive voltage range makes it a strong choice for new high-frequency designs.
When designing with this part, verify that the 4 V minimum output drive suits your FET's gate-threshold requirement; some logic-level GaN FETs need only 3.3 V drive. The exposed pad (EP) must be soldered to a sufficiently large copper island for thermal relief, as the 4 A peak currents create brief but high dissipation events during switching.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes drawn from the Infineon datasheet and reference designs - information not aggregated on the manufacturer product page alone.
Drop-in alternatives for 2EDL900G3XTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2EDL900G3XTMA1 (same form factor and footprint) — differing in Package, Isolation Type, Driver Type, Number of Channels, Peak Sink Current.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
2EDL901G3XTMA1
✅ Drop-In📋 Reference alternative (not in catalog)
2EDL902G3XTMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
2EDL8034G4CXTMA1
✅ Drop-In✓ In Stock
$1.55 / Unit
View Datasheet →2EDL5023U2DXTMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.4 / Unit
View Datasheet →2EDL6014ACG2DXTMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.18 / Unit
View Datasheet →2EDL8124GXUMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.98 / Unit
View Datasheet →2EDL900G3XTMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Dual-channel level-shift gate driver IC |
| Topology Supported | Half-bridge, high-side, low-side |
| Isolation Type | Junction isolation (JI), 120 V |
| Number of Channels | 2 (high-side + low-side) |
| Peak Source Current | 4 A |
| Peak Sink Current | 6 A |
| Drive Output Voltage Range | 4 V to 16 V |
| Supply Voltage (VDD/VBS) | 4 V to 16 V |
| Switching Device Supported | Si MOSFET, enhancement-mode GaN FET |
| Configurable Deadtime | Yes (programmable) |
| Integrated Current Sense Amplifier | Yes |
| PWM Modes | Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted |
| Input Logic Compatibility | 3.3 V / 5 V / TTL (per datasheet) |
| Package | TSNP-16 (3x3 mm) with exposed pad |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -40 C to +125 C |
| MSL Level | 1 |
| RoHS Status | Compliant |
2EDL900G3XTMA1 Pin Configuration
| Pin 1 | VDD — Logic / low-side supply voltage (4 V to 16 V) |
| Pin 2 | INH — High-side PWM input |
| Pin 3 | INL — Low-side PWM input |
| Pin 4 | DT — Deadtime programming (resistor to GND) |
| Pin 5 | CSA_OUT — Current-sense amplifier output |
| Pin 6 | CSA_IN+ — Current-sense amplifier non-inverting input |
| Pin 7 | CSA_IN- — Current-sense amplifier inverting input |
| Pin 8 | VSS — Logic / low-side ground |
| Pin 9 | OUTL — Low-side gate-drive output |
| Pin 10 | PGND — Low-side power ground |
| Pin 11 | VBS — High-side bootstrap supply |
| Pin 12 | HS — High-side floating supply return / switching node |
| Pin 13 | OUTH — High-side gate-drive output |
| Pin 14 | NC — Not connected (per datasheet) |
| Pin 15 | NC — Not connected (per datasheet) |
| Pin 16 | NC — Not connected (per datasheet) |
| Pin EP | EPAD — Exposed thermal pad - connect to PGND |
Typical Applications
2EDL900G3XTMA1 is suitable for 7 applications: 48 V Server / Telecom Point-of-Load Converters, Enhancement-Mode GaN Half-Bridge Power Stages, Industrial SMPS Half-Bridge Converters, Class-D Audio Amplifier Output Stages, Synchronous Rectifier Drivers for Isolated DC-DC, eMobility Auxiliary Power Converters, Solar Microinverter / Optimizer Power Stages.
48 V Server / Telecom Point-of-Load Converters
The 2EDL900G3 fits 48 V server and telecom point-of-load (POL) converters where high step-down ratios demand a high-side capable gate driver with strong drive current. Its 120 V junction isolation covers 48 V nominal rails plus switching transients, and the 4 A source / 6 A sink drive strength switches 80 V to 100 V Si MOSFETs or 80 V to 120 V GaN FETs in under 15 ns - critical for 1 MHz+ switching frequencies that shrink magnetics. The integrated current-sense amplifier eliminates a separate op-amp in peak-current-mode control, reducing BOM and PCB area. Place the driver within 5 mm of the FET gates and use a Kelvin source connection for clean gate-loop return.
Recommended
Enhancement-Mode GaN Half-Bridge Power Stages
The 2EDL900G3 is purpose-built to drive enhancement-mode GaN FETs in half-bridge configurations where the 4 V to 6 V gate-drive requirement and sub-10 ns switching transitions stress conventional MOSFET drivers. Its 4 A / 6 A asymmetric drive handles GaN gate charge in single-digit nanoseconds, and the integrated deadtime control prevents the cross-conduction that would otherwise destroy the half-bridge. The 120 V junction isolation covers GaN FETs rated up to 100 V. Pair with a GaN controller such as the XDPP1148 or TDA38826 and ensure the bootstrap capacitor value matches the high-side switching frequency to avoid UVLO.
Recommended
Industrial SMPS Half-Bridge Converters
The 2EDL900G3 drives industrial half-bridge SMPS in the 24 V to 72 V input range, including welding power supplies, battery chargers, and motor-drive auxiliary rails. Its 120 V junction isolation handles the 80 V to 100 V bus rails typical of these systems with margin, and the configurable deadtime supports both hard-switched and resonant (LLC, phase-shifted full-bridge) topologies. The integrated current-sense amplifier simplifies peak-current-mode control loops commonly used in industrial converters. Add a TVS clamp on the switching node (HS pin) to protect against transformer leakage spike transients.
Recommended
Class-D Audio Amplifier Output Stages
The 2EDL900G3 drives Class-D audio amplifier output stages where clean switching preserves low total harmonic distortion (THD). The 4 A / 6 A drive strength is sufficient for the high-current gate transitions of audio-band (250 kHz to 1 MHz) MOSFET half-bridges, and the integrated deadtime control minimizes shoot-through that would otherwise degrade THD+N performance. The 120 V isolation covers automotive (12 V to 48 V bus) and prosumer audio rails. Choose FETs with low Qgd to keep deadtime-induced distortion below audibility thresholds, and route the bootstrap diode close to the high-side supply pin to minimize switching losses.
Recommended
Synchronous Rectifier Drivers for Isolated DC-DC
The 2EDL900G3 functions as a synchronous-rectifier (SR) driver in isolated half-bridge and forward converters where self-driven SR schemes are inadequate. Its level-shift high-side output drives the secondary-side high-side FET referenced to the switching node, while the low-side output drives the complementary FET. The 4 A / 6 A drive keeps SR body-diode conduction time short, improving efficiency 1% to 3% over self-driven schemes. The integrated current-sense amplifier provides SR current information for adaptive timing or DCM detection in advanced controllers.
Recommended
eMobility Auxiliary Power Converters
The 2EDL900G3 drives auxiliary power converters in eMobility applications including 12 V, 24 V, and 48 V subsystems for electric bicycles, scooters, and light electric vehicles. The 120 V isolation comfortably covers 48 V vehicle bus rails, and the small 3x3 mm TSNP package suits space-constrained enclosures. The integrated current-sense amplifier enables peak-current-mode control well-suited to battery-input converters with widely varying source impedance. Add input TVS protection for automotive load-dump transients and route the bootstrap return through a Kelvin connection to avoid ground bounce on the high-side gate.
Recommended
Solar Microinverter / Optimizer Power Stages
The 2EDL900G3 drives half-bridge power stages in solar microinverters and DC optimizers where sub-100 V module-level conversion benefits from GaN switching frequencies. The 120 V junction isolation covers 60 V to 80 V module-level bus rails, and the integrated deadtime and PWM-mode flexibility support both hard-switched and resonant topologies used in optimizer products. The integrated current-sense amplifier reduces BOM in cost-sensitive microinverter designs. Use synchronous boot refresh logic (controller-dependent) to keep the high-side supply above UVLO during long off periods in burst-mode operation.
Recommended
Recommended Products Summary
Engineering reference data for 2EDL900G3XTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EDL901G3XTMA1 | 2EDL902G3XTMA1 | 2EDL8034G4CXTMA1 | 2EDL5023U2DXTMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TSNP-16 (3x3 mm) | TSNP-16 (3x3 mm) | TSNP-16 (3x3 mm) | TSNP-16 (3x3 mm) | DSO-16 |
Key Differentiators
- Integrated current-sense amplifier eliminates external op-amp (vs 2EDL8034G4CXTMA1)
- Five configurable PWM modes for controller flexibility (vs 2EDL5023U2DXTMA1)
- Compact 3x3 mm TSNP package with strong drive strength (vs 2EDL6014ACG2DXTMA1)
Design Notes
Place the 2EDL900G3 within 5 mm of the gates of the power FETs it drives to minimize gate-loop inductance. Use a Kelvin source connection - separate the gate-drive return from the power ground and tie them together at the FET source pad - to avoid ground bounce that would otherwise slow turn-off. The exposed pad (EPAD) must be soldered to a copper island of at least 25 mm² on the top layer for thermal relief.
The high-side bootstrap capacitor (VBS to HS) must be sized to supply the high-side quiescent current plus gate charge during the maximum on-time. Estimated: for a 1 MHz switching frequency and 20 nC total gate charge at 6 V drive, the minimum Cboot is approximately 220 nF per amp of FET gate drive current. Use an X7R 100 V ceramic with low DC bias derating and place it directly adjacent to the VBS / HS pins.
Estimated: at 1 MHz switching frequency, 6 V gate drive, and 20 nC gate charge per FET, the 2EDL900G3 dissipates approximately 0.24 W (P = Vdd x Qg x fsw per channel). With the exposed pad soldered to a 25 mm² copper island on a 1 oz 4-layer PCB, theta_JA is approximately 50 C/W, yielding a junction temperature rise of 12 C above ambient. No external heatsink is required for typical half-bridge designs.
Do not exceed the 120 V junction-isolation rating between the high-side rail (VBS / HS) and the low-side ground (VSS / PGND). Switching-node transients above 120 V will permanently damage the device - add a TVS clamp or RC snubber on the HS node if transformer leakage inductance creates excessive ringing. Also verify that the deadtime resistor value matches the chosen FET pair; too short a deadtime causes shoot-through, too long increases body-diode conduction losses.
Compliance Information
RoHS compliant per Infineon product page; not AEC-Q100 qualified (industrial grade).
